BYV72EF

更新时间： 2024-11-11 22:08:47

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
6页	43K
描述
Rectifier diodes ultrafast, rugged

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BYV72EF 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV72EF series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Isolated mounting tab

V_R= 150 V/ 200 V

V_F≤ 0.9 V

I_O(AV)= 20 A

I_RRM= 0.2 A

t_rr≤ 28 ns

GENERAL DESCRIPTION

PINNING

SOT199

Dual, ultra-fast, epitaxial rectifier

diodes intended for use as output

rectifiersinhighfrequencyswitched

mode power supplies.

DESCRIPTION

anode 1 (a)

cathode (k)

case

The BYV72EF series is supplied in

the conventional leaded SOT199

package.

anode 2 (a)

isolated

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BYV72EF

-150

150

-200

200

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_hs≤ 125˚C

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave

(both diodes conducting)¹

δ = 0.5; T_hs≤ 78 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode

T_hs≤ 78 ˚C

t = 10 ms

t = 8.3 ms

150

160

sinusoidal; with reapplied

V_RWM(max)

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

0.2

per diode

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

1 Neglecting switching and reverse current losses.

July 1998

Rev 1.100

12 3 4 5 6

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BYV72EW-200	PHILIPS	获取价格	Rectifier Diode, 30A, 200V V(RRM),
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