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BYQ28EB-100HE3/81 PDF预览

BYQ28EB-100HE3/81

更新时间: 2024-11-11 13:44:11
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
5页 143K
描述
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYQ28EB-100HE3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.895 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:55 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYQ28EB-100HE3/81 数据手册

 浏览型号BYQ28EB-100HE3/81的Datasheet PDF文件第2页浏览型号BYQ28EB-100HE3/81的Datasheet PDF文件第3页浏览型号BYQ28EB-100HE3/81的Datasheet PDF文件第4页浏览型号BYQ28EB-100HE3/81的Datasheet PDF文件第5页 
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Rectifier  
FEATURES  
• Power pack  
TO-220AB  
ITO-220AB  
Available  
• Glass passivated chip junction  
• Ultrafast recovery times  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
3
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C (for TO-263AB  
package)  
3
2
2
1
1
BYQ28E, UG10  
BYQ28EF, UGF10  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
PIN 1  
PIN 1  
PIN 2  
PIN 2  
CASE  
PIN 3  
PIN 3  
• AEC-Q101 qualified  
TO-263AB  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
K
TYPICAL APPLICATIONS  
2
For use in low voltage, high frequency rectifier of switching  
power supplies, freewheeling diodes, DC/DC converters  
and polarity protection application.  
1
BYQ28EB, UGB10  
PIN 1  
K
MECHANICAL DATA  
PIN 2  
HEATSINK  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commerical grade  
Base P/NHE3 - RoHS-compliant, automotive grade  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 5.0 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VRRM  
IFSM  
trr  
100 V to 200 V  
55 A  
meets JESD 201 class 2 whisker test  
25 ns  
Polarity: As marked  
VF  
0.895 V  
150 °C  
Mounting Torque: 10 in-lbs max.  
TJ max.  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
UG10BCT  
UG10CCT  
UG10DCT  
PARAMETER  
SYMBOL  
UNIT  
BYQ28E-100 BYQ28E-150 BYQ28E-200  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
100  
100  
100  
150  
150  
150  
10  
200  
200  
200  
V
V
V
Maximum DC blocking voltage  
total device  
per diode  
Maximum average forward rectified current at TC = 100 °C  
IF(AV)  
A
5.0  
Peak forward surge current 8.3 ms single half sine-wave  
IFSM  
IRSM  
VC  
55  
0.2  
8
A
A
superimposed on rated load per diode  
Non-repetitive peak reverse current per diode at tp = 100 μs  
Electrostatic discharge capacitor voltage,  
human body model: C = 250 pF, R = 1.5 k  
kV  
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
- 40 to + 150  
1500  
°C  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Revision: 02-Sep-13  
Document Number: 88549  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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