Datasheet > BYM11-1000-E3/76

BYM11-1000-E3/76

更新时间： 2024-09-15 03:59:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	92K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

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中文翻译

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数据手册

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BYM11-1000-E3/76 数据手册

BYM11-50 thru BYM11-1000, RGL41A thru RGL41M

Vishay General Semiconductor

Surface Mount Glass Passivated Junction Fast

Switching Rectifier

FEATURES

• Superectifier structure for high reliability

condition

• Patented glass-plastic encapsulation technique

• Ideal for automated placement

• Fast switching for high efficiency

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020C, LF max peak

of 250 °C

• Solder Dip 260 °C, 40 seconds

*Glass-plastic encapsulation

is covered by

Patent No. 3,996,602,

brazed-lead assembly to

Patent No. 3,930,306

DO-213AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive and telecommunication.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 1000 V

30 A

MECHANICAL DATA

Case: DO-213AB, molded epoxy over glass body

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

150 ns, 250 ns, 500 ns

1.3 V

V_F

T_jmax.

175 °C

Polarity: Two bands indicate cathode end - 1st band

denotes device type and 2nd band denotes repetitive

peak reverse voltage rating

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

BYM

11-50

BYM

11-100

BYM

11-200

BYM

11-400

BYM

11-600

BYM

11-800

BYM

11-1000

PARAMETER

SYMBOL

UNIT

FAST SWITCHING TIME DEVICE:

1ST BAND IS RED

RGL41A RGL41B RGL41D RGL41G RGL41J RGL41K RGL41M

Polarity color bands (2nd Band)

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Gray

Red

100

Orange

200

Yellow

400

Green

600

Blue

800

560

800

Violet

1000

700

V_RRM

V_RMS

V_DC

140

280

420

Maximum DC blocking voltage

100

200

400

600

1000

Maximum average forward rectified

current at T_T= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single

half sine-wave superimposed on rated load

I_FSM

Maximum full load reverse current, full

cycle average at T_A= 55 °C

I_R(AV)

µA

°C

Operating junction and storage

temperature range

T_J, T_STG

- 65 to + 175

Document Number 88547

26-Jun-06

www.vishay.com

12 3 4

中文翻译

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与BYM11-1000-E3/76相关器件

型号	品牌	获取价格	描述	数据表
BYM11-1000-E3/96	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO213AB
BYM11-1000-E3/97	VISHAY	获取价格	Diode Switching 1KV 1A 2-Pin DO-213AB T/R
BYM11-1000-HE3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal D
BYM11-1000HE3/96	VISHAY	获取价格	FAST RECOVERY RECTFR 1KV 1A 2PIN DO-213AB - Tape and Reel
BYM11-1000-HE3/96	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sig
BYM11-1000HE3/97	VISHAY	获取价格	FAST RECOVERY RECTFR 1KV 1A 2PIN DO-213AB - Tape and Reel
BYM11-1000-HE3/97	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sig
BYM11-1000HE3_A/H	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO213AB
BYM11-1000HE3_A/I	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO213AB
BYM11-100-E3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Di

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