BYD17DA

更新时间： 2024-11-13 06:44:51

品牌	Logo	应用领域
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页数	文件大小	规格书
2页	104K
描述
GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS

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BYD17DA 数据手册

TH97/10561QM

TW00/17276EM

IATF 0060636

SGS TH07/1033

GENERAL PURPOSE CONTROLLED

AVALANCHE RECTIFIERS

BYD17DA - BYD17MA

SMA (DO-214AC)

PRV : 200 - 1000 Volts

Io : 1.5 Amperes

1.1 ± 0.3

FEATURES :

* Glass passivated junction chip

* High maximum operating temperature

* Low leakage current

* Excellent stability

* Smallest surface mount rectifier outline

* Pb / RoHS Free

0.2 ± 0.07

1.2 ± 0.2

2.1 ± 0.2

2.6 ± 0.15

MECHANICAL DATA :

2.0 ± 0.2

* Case : SMA Molded plastic

Dimensions in millimeters

* Epoxy : UL94V-O rate flame retardant

* Lead : Lead Formed for Surface Mount

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.067 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified.)

BYD

RATING

SYMBOL

UNIT

17DA 17GA 17JA 17KA 17MA

V_RRM

V_RWM

Maximum Repetitive Peak Reverse Voltage

Maximum Crest Working Reverse Voltage

Maximum Continuous Reverse Voltage

200

225

400

450

600

800

900

1000

1100

600

V_R

600

Min. Reverse Avalanche Breakdown Voltage at I_R= 0.1 mA

V_(BR)R-min

650

Maximum Average Forward Current

(Note 1)

Ttp = 105 °C

1.5

I_F(AV)

I_FSM

V_F

Ta = 65 °C; PCB mounting

0.6

Maximum Non-Repetitive Peak Forward Surge Current (Note 2)

at I_F= 1 A , Tj = 25 °C

Maximum Forward Voltage

1.05

at I_F= 1 A , Tj = 175 °C

at V_R= V_RRMmax, Tj = 25 °C

at V_R= V_RRMmax, Tj = 165 °C

0.93

I_R

I_R(H)

Trr

Maximum Reverse Current

1.0

μA

100

Typical Reverse Recovery Time (Note 3)

Thermal Resistance from Junction to Tie-Point

Thermal Resistance from Junction to Ambient (Note 4)

Operating Junction Temperature Range

Storage Temperature Range

μs

Rth j-tp

Rth j-a

T_J

K / W

°C

150

- 65 to + 175

T_STG

°C

Notes :

(1) Averaged over any 20 ms period.

(2) t = 10ms half sine wave; Tj = Tjmax prior to surge; V_R= V_RRMmax

(3) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.

(4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥ 40 μm.

Page 1 of 2

Rev. 00 : February 13, 2008

中文翻译

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与BYD17DA相关器件

型号	品牌	获取价格	描述	数据表
BYD17DT/R	NXP	获取价格	DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SO-2, Signal Diode
BYD17DTRL	NXP	获取价格	DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
BYD17DTRL13	NXP	获取价格	DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
BYD17G	EIC	获取价格	GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS
BYD17G	NXP	获取价格	General purpose controlled avalanche rectifiers
BYD17G,115	NXP	获取价格	DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SO-2, Signal Diode
BYD17G,135	NXP	获取价格	DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE, GLASS, SO-2, Signal Diode
BYD17G/T1	ETC	获取价格	DIODE 1.4A CONTROLLED AVALANCHE
BYD17G/T3	NXP	获取价格	DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE, GLASS, SO-2, Signal Diode
BYD17GA	EIC	获取价格	GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS

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