SILICON RECTIFIER DIODES
BY550-50 ~ BY550-1000
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
1.00 (25.4)
0.21 (5.33)
MIN.
0.19 (4.83)
* Low reverse current
* Low forward voltage drop
0.375 (9.53)
0.285 (7.24)
MECHANICAL DATA :
1.00 (25.4)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
0.052 (1.32)
MIN.
0.048 (1.22)
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BY550 BY550 BY550 BY550 BY550 BY550 BY550
RATING
SYMBOL
UNIT
1000 Volts
700 Volts
- 50
- 100 - 200 - 400 - 600 - 800 - 1000
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
35
50
Maximum DC Blocking Voltage
100
1000 Volts
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60°C
Peak Forward Surge Current
IF
5.0
Amps.
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IFSM
VF
300
0.95
20
Amps.
Volts
mA
Maximum Forward Voltage at IF = 5.0 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
IR
IR(H)
CJ
50
mA
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
50
pF
RqJA
TJ
18
°C/W
°C
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998