Datasheet > 二极管 > 整流二极管> BY550-800-T3-LF

BY550-800-T3-LF

更新时间： 2024-11-27 13:06:03

品牌	Logo	应用领域
WTE		整流二极管
页数	文件大小	规格书
2页	56K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

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数据手册

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BY550-800-T3-LF 数据手册

GALAXY ELECTRICAL

BY550-50 --- BY550-1000

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 5.0 A

PLASTIC SILICON RECTIFIER

FEATURES

Low cost

Diffused junction

DO - 27

Low leakage

Low forward voltage drop

High current capability

Easilycleaned witn Freon,Alcohol,lsopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

MECHANICAL DATA

Case:JEDEC DO-27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.041 ounces, 1.15 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

UNITS

550-50 550-100

550-200 550-400 550-600 550-800 550-1000

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

MaximumDC blocking voltage

100

1000

Maximumaverage forw ard rectified current

5.0

I_F(AV)

9.5mmlead length,

@T_A=75

Peak forw ard surge current

I_FSM

8.3ms single half-sine-w ave

300.0

superimposed on rated load @T =125

Maximuminstantaneous forw ard voltage

1.1

V_F

I_R

@ 5.0 A

Maximumreverse current

@T_A=25

10.0

100.0

at rated DC blocking voltage @T_A=100

Typical junction capacitance

Typical thermal resistance

(Note1)

(Note2)

C_J

R_θ_JA

T_J

/ W

Operating junction temperature range

Storage temperature range

- 55 ---- + 150

T_STG

NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance from junction to ambient.

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0260031

中文翻译

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