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BY4_07

更新时间: 2024-01-23 00:34:38
品牌 Logo 应用领域
德欧泰克 - DIOTEC 高压
页数 文件大小 规格书
1页 46K
描述
High Voltage Si-Rectifiers

BY4_07 数据手册

  
BY4 ... BY16  
BY4 ... BY16  
High Voltage Si-Rectifiers  
Si-Hochspannungs-Gleichrichter  
Version 2006-09-07  
Nominal current  
Nennstrom  
1 A ... 0.3 A  
4000...16000 V  
Ø 6.3 x 21 [mm]  
1.9 g  
6.3  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Plastic case  
Kunststoffgehäuse  
Weight approx.  
Gewicht ca.  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 1.2±0.05  
Standard packaging bulk  
Standard Lieferform ungegurtet  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Rep. peak reverse volt. Surge peak reverse volt. Max. forward current  
Forward volt.  
Durchlass-Spg.  
VF [V] 2)  
Period. Spitzensperrspg. Stoßspitzensperrspg.  
RRM [V] RSM [V]  
Dauergrenzstrom  
V
V
I
FAV [A] 1)  
1.0  
BY4  
4000  
6000  
4000  
6000  
< 4.0  
< 6.0  
BY6  
1.0  
BY8  
8000  
8000  
0.5  
< 8.0  
BY12  
BY16  
12000  
16000  
12000  
16000  
0.5  
< 10.0  
< 15.0  
0.3  
Leakage Current  
Sperrstrom  
Tj = 25°C  
Tj = 100°C  
VR = VRRM  
VR = VRRM  
< 1 µA  
< 25 µA  
Peak forward surge current, 50 Hz half sine-wave  
Stoßstrom für eine 50 Hz Sinus-Halbwelle  
TA = 25°C  
TA = 25°C  
IFSM  
100 A  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
i2t  
50 A2s  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+150°C  
-50...+150°C  
Tj  
TS  
Thermal resistance junction to ambient air  
RthA  
< 25 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
1
2
Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden  
At / Bei IFAV,Tj = 25°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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