Datasheet > BY251GP/73-E3

BY251GP/73-E3

更新时间： 2024-11-18 18:22:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	290K
描述
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BY251GP/73-E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-201AD
包装说明：	PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

BY251GP/73-E3 数据手册

BY251GP thru BY255GP

Vishay General Semiconductor

Glass Passivated Junction Plastic Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

3.0 A

200 V to 1300 V

100 A

5.0 µA

V_F

1.1 V

T_jmax.

175 °C

DO-201AD

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly by

Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-201AD, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current, I less than 0.1 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

for both consuer and automotive applications

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol BY251GP BY252GP BY253GP BY254GP BY255GP Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

3.0

800

560

800

1300

910

Maximum RMS voltage

Maximum DC blocking voltage

1300

Maximum average forward rectified current 10 mm lead

length at T_A= 55 °C

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

100

Maximum full load reverse current, full cycle average 10 mm

lead length at T_A= 55 °C

I_R(AV)

µA

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Document Number 88541

14-Oct-05

www.vishay.com

12 3 4

中文翻译

下载PDF

与BY251GP/73-E3相关器件

型号	品牌	获取价格	描述	数据表
BY251GP/74	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/74-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/90	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/90-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/91	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/91-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/92	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/92-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/93	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/93-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

与BY251GP/73-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

BY251GP/73-E3

BY251GP/73-E3 技术参数

BY251GP/73-E3 数据手册

与BY251GP/73-E3相关器件

与BY251GP/73-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BY251GP/73-E3

BY251GP/73-E3 技术参数

BY251GP/73-E3 数据手册

与BY251GP/73-E3相关器件

与BY251GP/73-E3相关文章

您还可以找

您在本页遇到什么问题？