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BY229-800/B PDF预览

BY229-800/B

更新时间: 2024-11-10 23:38:59
品牌 Logo 应用领域
其他 - ETC 二极管快速恢复二极管
页数 文件大小 规格书
6页 53K
描述
DIODE FAST RECOVERY 1ST

BY229-800/B 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY229 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 200 V/ 400 V/ 600 V/800 V  
IF(AV) = 8 A  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
k
1
a
2
IFSM 60 A  
trr 135 ns  
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Glass-passivated double diffused  
rectifier diodes featuring low  
forward voltage drop, fast reverse  
recovery and soft recovery  
characteristic. The devices are  
intended for use in TV receivers,  
monitors and switchedmode power  
supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
tab  
1
2
The BY229 series is supplied in the  
conventional  
leaded  
SOD59  
(TO220AC) package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
BY229  
MIN.  
MAX.  
UNIT  
-200  
200  
-400  
-600  
600  
-800  
800  
VRSM  
Peak non-repetitive reverse  
voltage  
-
400  
V
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
Average forward current1  
-
-
-
200  
150  
150  
400  
300  
300  
600  
500  
500  
800  
600  
600  
V
V
V
IF(AV)  
square wave;  
-
8
7
A
δ = 0.5;  
T
mb 122 ˚C  
sinusoidal;  
a = 1.57;  
-
A
Tmb 125 ˚C  
IF(RMS)  
IFRM  
RMS forward current  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
-
11  
16  
A
A
T
mb 122 ˚C  
IFSM  
Non-repetitive peak forward  
current.  
t = 10 ms  
-
-
60  
66  
A
A
t = 8.3 ms  
sinusoidal;  
Tj = 150 ˚C prior to  
surge; with  
reapplied VRWM(max)  
t = 10 ms  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
-
-40  
-
18  
150  
150  
A2s  
˚C  
˚C  
1 Neglecting switching and reverse current losses.  
September 1998  
1
Rev 1.200  

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