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BUY25CS12K-11 PDF预览

BUY25CS12K-11

更新时间: 2024-11-21 01:17:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 480K
描述
HiRel RadHard Power-MOS

BUY25CS12K-11 数据手册

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Data Sheet  
HiRel RadHard Power-MOS  
BUY25CS12K-01  
Low RDS(on)  
Single Event Effect (SEE) hardened  
4
LET 85, Range: 118µm  
VGS = -10V, VDS = 250V  
VGS = -15V, VDS = 120V  
LET 55, Range: 90µm  
VGS = -15V, VDS = 250V  
VGS = -20V, VDS = 160V  
Total Ionisation Dose (TID) hardened  
100 kRad approved (Level R)  
1
Hermetically sealed  
N-channel  
2
3
Type  
Marking Pin Configuration  
Package  
1
2
3
4
BUY25CS12K-01  
BUY25CS12K-11  
-
-
D
S
G
Not connected TO-257AA  
Not connected TO-257AA  
G
D
S
Maximum Ratings  
Parameter  
Symbol  
VDS  
Values  
250  
Unit  
V
Drain Source Voltage  
Gate Source Voltage  
Drain Gate Voltage  
VGS  
+/- 20  
250  
V
VDG  
V
Continuous Drain Current  
TC = 25 °C  
TC = 100 °C  
ID  
A
12.4  
8
Continuous Source Current  
IS  
12.4  
A
Drain Current Pulsed, tp limited by Tjmax  
Total Power Dissipation 1)  
IDM  
Ptot  
TJ  
50  
Apk  
W
75  
Junction Temperature  
-55 to + 150  
-55 to + 150  
60  
°C  
°C  
mJ  
Operating and Storage Temperature  
Avalanche Energy  
Top  
EAS  
Thermal Characteristics  
Rth JC  
Tsol  
Thermal Resistance (Junction to Case)  
Soldering Temperature  
1.66  
250  
K/W  
°C  
Notes.:  
1) For T ≤ 25°C. For T > 25°C derating is required.  
S
S
IFAG PMM RFS D HIR  
1 of 8  
March 2015  

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