Datasheet > BUY25CS12K-11

BUY25CS12K-11

更新时间： 2024-02-11 01:40:45

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	480K
描述
HiRel RadHard Power-MOS

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中文翻译

获取价格

数据手册

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BUY25CS12K-11 数据手册

Data Sheet

HiRel RadHard Power-MOS

BUY25CS12K-01

 Low R_DS(on)

 Single Event Effect (SEE) hardened

LET 85, Range: 118µm

V_GS= -10V, V_DS= 250V

V_GS= -15V, V_DS= 120V

LET 55, Range: 90µm

V_GS= -15V, V_DS= 250V

V_GS= -20V, V_DS= 160V

 Total Ionisation Dose (TID) hardened

100 kRad approved (Level R)

 Hermetically sealed

 N-channel

Type

Marking Pin Configuration

Package

BUY25CS12K-01

BUY25CS12K-11

Not connected TO-257AA

Maximum Ratings

Parameter

Symbol

V_DS

Values

250

Unit

Drain Source Voltage

Gate Source Voltage

Drain Gate Voltage

V_GS

+/- 20

250

V_DG

Continuous Drain Current

T_C= 25 °C

T_C= 100 °C

I_D

12.4

Continuous Source Current

I_S

12.4

Drain Current Pulsed, t_plimited by T_jmax

Total Power Dissipation ¹⁾

I_DM

P_tot

T_J

Apk

Junction Temperature

-55 to + 150

°C

Operating and Storage Temperature

Avalanche Energy

T_op

E_AS

Thermal Characteristics

R_{th JC}

T_sol

Thermal Resistance (Junction to Case)

Soldering Temperature

1.66

250

K/W

°C

Notes.:

1) For T ≤ 25°C. For T > 25°C derating is required.

IFAG PMM RFS D HIR

1 of 8

March 2015

12 3 4 5 6 7 8

中文翻译

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