Datasheet > BUP603D

BUP603D

更新时间： 2024-11-13 22:17:19

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关双极性晶体管
页数	文件大小	规格书
8页	116K
描述
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

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中文翻译

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数据手册

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BUP603D 数据手册

BUP 603D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

BUP 603D

600V 42A

TO-218 AB

Q67040-A4230-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

600

CGR

= 20 kΩ

600

Gate-emitter voltage

DC collector current, (limited by bond wire)

T = 60 °C

± 20

T = 90 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

104

T = 90 °C

Diode forward current

T = 90 °C

Pulsed diode current, t = 1 ms

Fpuls

T = 25 °C

180

Power dissipation

tot

T = 25 °C

200

Chip or operating temperature

Storage temperature

- 55 ... + 150 °C

- 55 ... + 150

stg

Semiconductor Group

Dec-02-1996

12 3 4 5 6 7 8

中文翻译

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