Datasheet > BUK652R1-30C,127

BUK652R1-30C,127

更新时间： 2024-11-29 21:19:03

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	193K
描述
N-channel TrenchMOS intermediate level FET TO-220 3-Pin

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技术参数
数据手册

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BUK652R1-30C,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-220
包装说明：	PLASTIC, SC-46, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

BUK652R1-30C,127 数据手册

BUK652R1-30C

N-channel TrenchMOS intermediate level FET

Rev. 02 — 16 December 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

 Suitable for standard and logic level

gate drive sources

1.3 Applications

 12 V Automotive systems

 Start-Stop micro-hybrid applications

 Transmission control

 Electric and electro-hydraulic power

steering

 Ultra high performance power

 Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

120

263

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 13

2.02 2.4

11.1 13

mΩ

on-state

resistance

V_GS= 5 V; I_D= 15 A;

T_j= 25 °C; see Figure 14

12 3 4 5 6 7...16

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