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BUK545-200B PDF预览

BUK545-200B

更新时间: 2024-11-28 22:39:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 58K
描述
PowerMOS transistor Logic level FET

BUK545-200B 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):100 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):7 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):80 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:30 W最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):235 ns最大开启时间(吨):115 ns
Base Number Matches:1

BUK545-200B 数据手册

 浏览型号BUK545-200B的Datasheet PDF文件第2页浏览型号BUK545-200B的Datasheet PDF文件第3页浏览型号BUK545-200B的Datasheet PDF文件第4页浏览型号BUK545-200B的Datasheet PDF文件第5页浏览型号BUK545-200B的Datasheet PDF文件第6页浏览型号BUK545-200B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product Specification  
PowerMOS transistor  
Logic level FET  
BUK545-200A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
logic level field-effect power  
transistor in a plastic full-pack  
envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in automotive and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK545  
-200A  
200  
7.6  
30  
150  
0.23  
-200B  
200  
7
30  
150  
0.28  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
V
A
W
˚C  
Ptot  
Tj  
Total power dissipation  
Junction temperature  
Drain-source on-state  
RDS(ON)  
resistance;  
VGS =5 V  
PINNING - SOT186  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
Drain-source voltage  
-
-
-
-
-
200  
200  
15  
V
V
V
V
VDGR  
±VGS  
±VGSM  
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
Non-repetitive gate-source voltage tp 50 µs  
-
20  
-200A  
7.6  
-200B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
7
A
A
A
ID  
Drain current (DC)  
4.8  
4.4  
28  
IDM  
Drain current (pulse peak value)  
30  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
30  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
4.17  
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
April 1993  
1
Rev 1.100  

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