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BUK453-100 PDF预览

BUK453-100

更新时间: 2024-09-30 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
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7页 78K
描述
PowerMOS transistor

BUK453-100 数据手册

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Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK453-100A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK453  
-100A  
100  
14  
75  
175  
0.16  
-100B  
100  
13  
75  
175  
0.20  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
100  
100  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-100A  
14  
-100B  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
13  
9
A
A
A
ID  
Drain current (DC)  
10  
IDM  
Drain current (pulse peak value)  
56  
52  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
75  
175  
175  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
2
-
K/W  
K/W  
mounting base  
Thermal resistance junction to  
ambient  
60  
April 1998  
1
Rev 1.100  

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