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BUK454-200B PDF预览

BUK454-200B

更新时间: 2024-09-30 22:36:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
7页 77K
描述
PowerMOS transistor

BUK454-200B 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.27Is Samacsys:N
雪崩能效等级(Eas):50 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):8.2 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):80 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:95 W最大脉冲漏极电流 (IDM):33 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):180 ns最大开启时间(吨):90 ns
Base Number Matches:1

BUK454-200B 数据手册

 浏览型号BUK454-200B的Datasheet PDF文件第2页浏览型号BUK454-200B的Datasheet PDF文件第3页浏览型号BUK454-200B的Datasheet PDF文件第4页浏览型号BUK454-200B的Datasheet PDF文件第5页浏览型号BUK454-200B的Datasheet PDF文件第6页浏览型号BUK454-200B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK454-200A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a plastic  
envelope suitable for use in surface  
mount applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
200  
9.2  
90  
175  
0.4  
V
A
W
˚C  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and in  
general purpose switching  
Ptot  
Tj  
RDS(ON)  
applications.  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
200  
200  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-200A  
9.2  
-200B  
8.2  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
A
A
A
ID  
Drain current (DC)  
6.5  
5.8  
IDM  
Drain current (pulse peak value)  
36  
33  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
90  
175  
175  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance junction to  
-
-
1.67  
K/W  
mounting base  
Rth j-a  
Thermal resistance junction to  
ambient  
-
60  
-
K/W  
February 1996  
1
Rev 1.000  

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PowerMOS transistor