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BUK453-100B PDF预览

BUK453-100B

更新时间: 2024-09-30 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 78K
描述
PowerMOS transistor

BUK453-100B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.26
雪崩能效等级(Eas):70 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):100 pFJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:75 W
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):145 ns
最大开启时间(吨):60 nsBase Number Matches:1

BUK453-100B 数据手册

 浏览型号BUK453-100B的Datasheet PDF文件第2页浏览型号BUK453-100B的Datasheet PDF文件第3页浏览型号BUK453-100B的Datasheet PDF文件第4页浏览型号BUK453-100B的Datasheet PDF文件第5页浏览型号BUK453-100B的Datasheet PDF文件第6页浏览型号BUK453-100B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK453-100A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK453  
-100A  
100  
14  
75  
175  
0.16  
-100B  
100  
13  
75  
175  
0.20  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
resistance  
V
A
W
˚C  
Ptot  
Tj  
RDS(ON)  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
100  
100  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-100A  
14  
-100B  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
13  
9
A
A
A
ID  
Drain current (DC)  
10  
IDM  
Drain current (pulse peak value)  
56  
52  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
75  
175  
175  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
2
-
K/W  
K/W  
mounting base  
Thermal resistance junction to  
ambient  
60  
April 1998  
1
Rev 1.100  

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