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BUK446-800A PDF预览

BUK446-800A

更新时间: 2024-09-30 22:19:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 67K
描述
PowerMOS transistor

BUK446-800A 数据手册

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Philips Semiconductors  
Product Specification  
PowerMOS transistor  
BUK446-800A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic full-pack envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK446  
-800A  
800  
2.0  
30  
-800B  
800  
1.7  
30  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state  
resistance  
V
A
W
Ptot  
RDS(ON)  
3
4
PINNING - SOT186  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
800  
800  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-800A  
2.0  
1.3  
8
-800B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
1.7  
1.1  
6.8  
A
A
A
ID  
Drain current (DC)  
IDM  
Drain current (pulse peak value)  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction Temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
30  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
4.16  
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
May 1995  
1
Rev 1.200  

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