生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
雪崩能效等级(Eas): | 100 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 7 A | 最大漏源导通电阻: | 0.28 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 28 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK445-200B127 | NXP |
获取价格 |
TRANSISTOR 7 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
BUK445-400A | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-400B | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-450B | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-500A | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-500B | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
BUK445-50A | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-50B | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-600A | ETC |
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N-Channel Enhancement MOSFET | |
BUK445-600B | NXP |
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TRANSISTOR 2.2 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |