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BUD43D2T4 PDF预览

BUD43D2T4

更新时间: 2024-02-01 02:00:16
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
12页 140K
描述
2A, 400V, NPN, Si, POWER TRANSISTOR, DPAK-3

BUD43D2T4 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.82外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):8
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):13 MHzBase Number Matches:1

BUD43D2T4 数据手册

 浏览型号BUD43D2T4的Datasheet PDF文件第2页浏览型号BUD43D2T4的Datasheet PDF文件第3页浏览型号BUD43D2T4的Datasheet PDF文件第4页浏览型号BUD43D2T4的Datasheet PDF文件第5页浏览型号BUD43D2T4的Datasheet PDF文件第6页浏览型号BUD43D2T4的Datasheet PDF文件第7页 
BUD43D2  
Bipolar NPN Transistor  
High Speed, High Gain Bipolar NPN  
Transistor Integrating an Antisaturation  
Network and a Transient Voltage  
Suppression Capability  
http://onsemi.com  
The BUD43D2 is a state–of–the–art bipolar transistor. Tight  
dynamic characteristics and lot to lot minimum spread make it ideally  
suitable for light ballast applications.  
2 AMPERES  
700 VOLTS  
Main Features:  
25 WATTS  
POWER TRANSISTOR  
Free Wheeling Diode Built In  
Flat DC Current Gain  
Fast Switching Times and Tight Distribution  
“6 Sigma” Process Providing Tight and Reproductible Parameter  
Spreads  
Two Versions:  
BUD43D2–1: Case 369 for Insertion Mode  
BUD43D2: Case 369A for Surface Mount Mode  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
12  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
V
CES  
DPAK  
DPAK  
EBO  
CASE 369  
STYLE 1  
CASE 369A  
STYLE 1  
Collector Current – Continuous  
Collector Current – Peak (Note 1)  
I
C
2.0  
5.0  
I
CM  
Base Current – Continuous  
Base Current – Peak (Note 1)  
I
1.0  
2.0  
Adc  
MARKING DIAGRAMS  
B
I
BM  
TYPICAL GAIN  
YWW  
BUD  
YWW  
BUD  
Typical Gain  
h
FE  
43D2  
43D2  
@ I = 100 mA, V = 1 V  
55  
32  
C
CE  
@ I = 0.3 A, V = 1 V  
C
CE  
THERMAL CHARACTERISTICS  
Characteristic  
Y
WW  
= Year  
= Work Week  
Symbol  
Value  
Unit  
Total Device Dissipation  
P
D
BUD43D2 = Device Code  
@ T = 25°C  
25  
W
C
Derate above 25°C  
0.2  
W/°C  
Operating and Storage  
Temperature Range  
T , T  
–65 to  
+150  
°C  
°C/W  
°C/W  
°C  
J
stg  
ORDERING INFORMATION  
Device  
Package  
DPAK  
Shipping  
Thermal Resistance –  
Junction–to–Case  
R
5.0  
71.4  
260  
θ
JC  
JA  
L
BUD43D2–1  
BUD43D2T4  
75 Units/Rail  
Thermal Resistance –  
Junction–to–Ambient  
R
θ
DPAK  
3000/Tape & Reel  
Maximum Lead Temperature for Soldering  
T
Purposes: 1/8from Case for 5 sec.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2001 – Rev. 1  
BUD43D2/D  

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