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BU9882F-E2 PDF预览

BU9882F-E2

更新时间: 2022-12-01 22:30:05
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
17页 812K
描述
EEPROM, PDSO14, SOP-14

BU9882F-E2 数据手册

 浏览型号BU9882F-E2的Datasheet PDF文件第4页浏览型号BU9882F-E2的Datasheet PDF文件第5页浏览型号BU9882F-E2的Datasheet PDF文件第6页浏览型号BU9882F-E2的Datasheet PDF文件第8页浏览型号BU9882F-E2的Datasheet PDF文件第9页浏览型号BU9882F-E2的Datasheet PDF文件第10页 
BU9882/F/FV-W  
Description  
The BU9882 ICs are dual port EEPROMs compatible with the DDC2TM. 2 independent ports allow 2 EDID channels to be  
read simultaneously.  
Features  
1) Designed for use with DDC2TM  
2) 2-port simultaneous read function  
3) Operating voltage range: 2.5V-5.5V  
4) Page write function: 8bytes  
5) Low power consumption:  
Active (at 5V) : 1.5mA(typ)  
Stand-by (at 5V) : 0.1μA(typ)  
6) Data security  
Write protection with WP  
Write protection at low power supply voltage  
7) Various package types available: DIP14 / SOP14 / SSOP14  
8) Initial data: FFh  
9) Data retention: 10years  
10) Rewriting possible up to 100,000 times  
Absolute maximum ratings  
Recommended operating conditions  
Parameter  
Symbol  
VCC  
Rating  
Unit  
V
Parameter  
Supply Voltage  
Input Voltage  
Symbol  
VCC  
Rating  
2.55.5  
Unit  
V
Supply Voltage  
-0.3+6.5  
1
*
2
*
3
*
950 (DIP14)  
VIN  
0VCC+1.0  
V
Power Dissipation  
Pd  
450 (SOP14)  
350 (SSOP14)  
mW  
Storage  
Temperature  
Operating  
Temperature  
Terminal Voltage  
Memory cell characteristics  
Tstg  
-65+125  
Limits  
Topr  
-
-40+85  
Parameter  
Min.  
Unit  
Typ. Max.  
4
*
-0.3VCC+1.0  
V
Write/Erase Cycle 100,000  
-
-
-
-
Cycle  
Year  
* Reduce by 9.5 mW/°C over 25°C (*1), 4.5mW/(*2), 3.5mW/(*3).  
Data Retention  
10  
*4 6.8V (Max.)  
Electrical characteristics – DC (Unless otherwise specified, Ta=-40℃~+85,VCC=2.5V5.5V)  
Limits  
Parameter  
Symbol  
Unit  
Condition  
Min.  
2.0  
Typ.  
Max.  
VIH1  
VIL1  
VIL2  
V
V
V
V
“H” Input Voltage 1  
0.8  
VCC4.0V  
VCC4.0V  
“L” Input Voltage 1  
“L” Input Voltage 2  
“L” output Voltage  
0.2VCC  
0.4  
VOL1  
SDA_PC0/1, IOL=3.0mA *1  
SCL_PC0/1,DDCENA, BANKSEL,  
Input Leakage Current 1  
Input Leakage Current 2  
Output Leakage Current  
ILI1  
ILI2  
ILO  
-1  
-1  
-1  
1
50  
1
μA  
μA  
μA  
VIN=0VVCC+1.0  
___  
WP  
SDA_PC0/1,SCL/SDA_MON(DDCENA=GND),  
VOUT=0VVCC+1.0  
fSCL=400kHz, VCC=5.5V  
tWR=10ms  
Operating Current  
Standby Current  
ICC  
ISB  
1.5  
0.1  
3.0  
5
A  
μA  
SCL/SDA_PC0/1=VCC  
SCL/SDA_MON=H-Z  
DDCENA=WPB=BANKSEL=GND  
DUALPCB=VCC  
Note: This IC is not designed to be radiation-resistant  
*1 IOL at monitor mode (DDCENAHIGH) is the sum of current flowing from the pull up resistor at the SDA_MON side to the pull up resistance at SDA_PC0/PC1  
7/16  

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