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BU9847GUL-WE2 PDF预览

BU9847GUL-WE2

更新时间: 2024-02-02 18:28:29
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
19页 394K
描述
WL-CSP EEPROM family I2C BUS

BU9847GUL-WE2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:ROHS COMPLIANT, VCSP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:10 weeks
风险等级:1.76Is Samacsys:N
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010D0MR
JESD-30 代码:R-PBGA-B6长度:1.95 mm
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:6字数:512 words
字数代码:512工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512X8封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA6,2X3,20
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/5 V认证状态:Not Qualified
座面最大高度:0.55 mm串行总线类型:I2C
最大待机电流:0.000002 A子类别:EEPROMs
最大压摆率:0.002 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.06 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

BU9847GUL-WE2 数据手册

 浏览型号BU9847GUL-WE2的Datasheet PDF文件第5页浏览型号BU9847GUL-WE2的Datasheet PDF文件第6页浏览型号BU9847GUL-WE2的Datasheet PDF文件第7页浏览型号BU9847GUL-WE2的Datasheet PDF文件第9页浏览型号BU9847GUL-WE2的Datasheet PDF文件第10页浏览型号BU9847GUL-WE2的Datasheet PDF文件第11页 
Technical Note  
BU9847GUL-W  
Command  
Write cycle  
Arbitrary data is written to EEPROM. When to write only 1 byte, byte write is normally used, and when to write  
continuous data of 2 bytes or more, simultaneous write is possible by page write cycle.  
S
T
A
R
T
W
R
I
T
E
S
T
O
P
SLAVE  
ADDRESS  
WORD  
ADDRESS  
DATA  
SDA  
LINE  
WA  
7
WA  
0
A2  
1
0
1
0
0
PS  
D7  
D0  
R
A
C
K
A
C
K
A
C
K
/
W
WP  
Fig.34 Byte write cycle  
S
T
A
R
T
W
S
T
O
P
R
I
SLAVE  
ADDRESS  
WORD  
ADDRESS(n)  
T
E
DATA(n)  
DATA(n+15)  
SDA  
LINE  
WA  
7
WA  
0
A2  
PS  
1
0
1
0
0
D7  
D0  
D0  
R
/
A
C
A
C
K
A
C
K
A
C
K
W K  
WP  
Fig.35 Page write cycle  
Data is written to the address designated by word address (n-th address).  
By issuing stop bit after 8bit data input, write to memory cell inside starts.  
When internal write is started, command is not accepted for tWR (5ms at maximum).  
By page write cycle, the following can be written in bulk. Up to 16 bytes.  
And when data of the maximum bytes or higher is sent, data from the first byte is overwritten.  
(Refer to “Internal address increment” of “Notes on page write cycle” in P8/16.)  
As for page write cycle of BU9847GUL-W, after page select bit (PS) of slave address is designated arbitrarily, by  
continuing data input of 2 bytes or more, the address of insignificant 4 bits is incremented internally, and data up to 16  
bytes can be written.  
Note)  
PS  
0
1
0 0 A2  
1
Fig.36 Difference of slave address of each type  
www.rohm.com  
2010.09 - Rev.A  
8/18  
© 2010 ROHM Co., Ltd. All rights reserved.  

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