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BU941SM PDF预览

BU941SM

更新时间: 2024-11-16 20:24:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关光电二极管晶体管
页数 文件大小 规格书
8页 213K
描述
15A, 400V, NPN, Si, POWER TRANSISTOR, POWER, SO-10

BU941SM 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G10针数:10
Reach Compliance Code:compliant风险等级:5.65
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:400 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-G10元件数量:1
端子数量:10最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BU941SM 数据手册

 浏览型号BU941SM的Datasheet PDF文件第2页浏览型号BU941SM的Datasheet PDF文件第3页浏览型号BU941SM的Datasheet PDF文件第4页浏览型号BU941SM的Datasheet PDF文件第5页浏览型号BU941SM的Datasheet PDF文件第6页浏览型号BU941SM的Datasheet PDF文件第7页 
BU941T/BU941TFI  
BU941SM  
HIGH VOLTAGE IGNITION COIL DRIVER  
NPN POWER DARLINGTON  
PRELIMINARY DATA  
VERY RUGGED BIPOLAR TECHNOLOGY  
HIGH OPERATING JUNCTION  
TEMPERATURE  
WIDE RANGE OF PACKAGES  
POWER PACKAGE SPECIFICALLY  
DESIGNED FOR SURFACE MOUNTING  
3
3
(Power SO-10  
)
2
2
1
1
APPLICATIONS  
TO-220  
ISOWATT220  
HIGH RUGGEDNESS ELECTRONIC  
IGNITIONS  
10  
1
Power SO-10  
INTERNAL SCHEMATIC DIAGRAM  
for Power SO-10  
Emitter: pins 1 - 5  
Base: pins 6 - 10  
Collector: tab  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BU941T  
BU941TFI  
BU941SM  
VCES  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
500  
V
V
400  
5
V
15  
A
ICM  
IB  
Collector Peak Current  
Base Current  
30  
A
1
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current  
5
55  
A
o
Total Dissipation at Tc = 25 C  
150  
-65 to 175  
175  
150  
-65 to 175  
175  
W
oC  
oC  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
1/8  
Dicember 1993  

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