生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 最大直流栅极触发电流: | 60 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 30 mA |
最大漏电流: | 5 mA | 通态非重复峰值电流: | 500 A |
最大通态电流: | 50000 A | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 断态重复峰值电压: | 200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BTW48-400 | STMICROELECTRONICS |
获取价格 |
50A, 400V, SCR, TO-48 | |
BTW48-400 | NJSEMI |
获取价格 |
GLASS PASSIVATED SILICON THYRISTORS | |
BTW48-400M | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,400V V(DRM),50A I(T),TO-208AA | |
BTW48-600 | NJSEMI |
获取价格 |
GLASS PASSIVATED SILICON THYRISTORS | |
BTW48-600 | STMICROELECTRONICS |
获取价格 |
50A, 600V, SCR, TO-48 | |
BTW48-600M | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,600V V(DRM),50A I(T),TO-208AA | |
BTW48-800 | STMICROELECTRONICS |
获取价格 |
50A, 800V, SCR, TO-48 | |
BTW48-800 | NJSEMI |
获取价格 |
GLASS PASSIVATED SILICON THYRISTORS | |
BTW48-800M | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,800V V(DRM),50A I(T),TO-208AA | |
BTW50-1000 | STMICROELECTRONICS |
获取价格 |
63A, 1000V, SCR, TO-65 |