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BTS640S2G

更新时间： 2024-01-15 19:02:30
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
15页 240K
描述
Smart Sense High-Side Power Switch

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BTS640S2G 技术参数

生命周期：Obsolete零件包装代码：SFM
包装说明：, SIP7,.1,50TB针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.3
内置保护：OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数：1
接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码：R-PSFM-T7
功能数量：1端子数量：7
输出电流流向：SOURCE最大输出电流：4 A
标称输出峰值电流：50 A封装主体材料：PLASTIC/EPOXY
封装等效代码：SIP7,.1,50TB封装形状：RECTANGULAR
封装形式：FLANGE MOUNT电源：12/24 V
认证状态：Not Qualified子类别：Peripheral Drivers
最大供电电压：34 V最小供电电压：5 V
标称供电电压：12 V表面贴装：NO
技术：MOS端子形式：THROUGH-HOLE
端子节距：1.27 mm端子位置：SINGLE
断开时间：200 µs接通时间：150 µs
Base Number Matches：1

BTS640S2G 数据手册

 浏览型号BTS640S2G的Datasheet PDF文件第1页浏览型号BTS640S2G的Datasheet PDF文件第3页浏览型号BTS640S2G的Datasheet PDF文件第4页浏览型号BTS640S2G的Datasheet PDF文件第5页浏览型号BTS640S2G的Datasheet PDF文件第6页浏览型号BTS640S2G的Datasheet PDF文件第7页 
BTS 640 S2  
Pin  
1
Symbol  
ST  
Function  
Diagnostic feedback: open drain, invers to input level  
2
GND  
IN  
Logic ground  
3
Input, activates the power switch in case of logical high signal  
Positive power supply voltage, the tab is shorted to this pin  
4
V
bb  
Sense current output, proportional to the load current, zero in  
the case of current limitation of load current  
5
IS  
6 & 7  
OUT  
(Load, L)  
Output, protected high-side power output to the load.  
Both output pins have to be connected in parallel for operation  
according this spec (e.g. kILIS).  
Design the wiring for the max. short circuit current  
Maximum Ratings at Tj = 25 °C unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
V
Supply voltage (overvoltage protection see page 4)  
Vbb  
Vbb  
43  
34  
Supply voltage for full short circuit protection  
V
T
=-40 ...+150°C  
j Start  
3)  
Load dump protection1)  
V
= V + V , V = 13.5V  
VLoad dump  
60  
V
LoadDump  
A
s
A
2)  
R
= 2 Ω, R = 1 Ω, t = 200 ms, IN= low or high  
L d  
I
Load current (Short circuit current, see page 5)  
IL  
self-limited  
A
Operating temperature range  
Storage temperature range  
Tj  
Tstg  
-40 ...+150  
-55 ...+150  
°C  
Power dissipation (DC), T ≤ 25 °C  
Ptot  
85  
W
C
Inductive load switch-off energy dissipation, single pulse  
V
= 12V, T = 150°C, T = 150°C const.  
j,start C  
bb  
IL = 12.6 A, ZL = 4,2mH, 0 Ω: EAS  
IL = 4 A, ZL = 330mH, 0 Ω: EAS  
0,41  
3,5  
J
Electrostatic discharge capability (ESD)  
IN: VESD  
ST, IS:  
1.0  
4.0  
8.0  
kV  
(Human Body Model)  
out to all other pins shorted:  
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993  
R=1.5kΩ; C=100pF  
Input voltage (DC)  
VIN  
-10 ... +16  
V
Current through input pin (DC)  
Current through status pin (DC)  
Current through current sense pin (DC)  
see internal circuit diagrams page 8  
IIN  
IST  
IIS  
±2.0  
±5.0  
±14  
mA  
1)  
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω  
resistor in the GND connection is recommended).  
2)  
3)  
R = internal resistance of the load dump test pulse generator  
I
VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839  
Semiconductor Group  
Page 2  
2003-Oct-01  
1234567...15

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