5秒后页面跳转
BTS640S2G PDF预览

BTS640S2G

更新时间: 2024-02-07 08:00:50
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
15页 240K
描述
Smart Sense High-Side Power Switch

BTS640S2G 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:, SIP7,.1,50TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.3
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T7
功能数量:1端子数量:7
输出电流流向:SOURCE最大输出电流:4 A
标称输出峰值电流:50 A封装主体材料:PLASTIC/EPOXY
封装等效代码:SIP7,.1,50TB封装形状:RECTANGULAR
封装形式:FLANGE MOUNT电源:12/24 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:NO
技术:MOS端子形式:THROUGH-HOLE
端子节距:1.27 mm端子位置:SINGLE
断开时间:200 µs接通时间:150 µs
Base Number Matches:1

BTS640S2G 数据手册

 浏览型号BTS640S2G的Datasheet PDF文件第3页浏览型号BTS640S2G的Datasheet PDF文件第4页浏览型号BTS640S2G的Datasheet PDF文件第5页浏览型号BTS640S2G的Datasheet PDF文件第7页浏览型号BTS640S2G的Datasheet PDF文件第8页浏览型号BTS640S2G的Datasheet PDF文件第9页 
BTS 640 S2  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
--  
typ  
max  
300  
Current sense settling time to IIS static±10% after  
positive input slope13) , I = 0  
j
5 A,  
tson(IS)  
--  
µs  
µs  
L
T = -40...+150°C  
Current sense settling time to 10% of IIS static after  
negative input slope13) , I = 5  
0 A ,  
tsoff(IS)  
--  
30  
100  
L
T = -40...+150°C  
j
Current sense rise time (60% to 90%) after change  
of load current13) , I = 2.5  
5 A  
tslc(IS)  
--  
2
10  
3
--  
4
µs  
L
Open load detection voltage14) (off-condition)  
VOUT(OL)  
V
T =-40..150°C:  
j
Internal output pull down  
(pin 6 to 2), V  
OUT  
=5 V, T =-40..150°C  
RO  
5
15  
40  
kΩ  
j
Input and Status Feedback15)  
Input resistance  
see circuit page 8  
RI  
3,0  
4,5  
7,0  
kΩ  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input threshold hysteresis  
T =-40..+150°C: VIN(T+)  
--  
1.5  
--  
--  
--  
3.5  
--  
V
V
V
j
T =-40..+150°C: VIN(T-)  
j
VIN(T)  
0.5  
--  
Off state input current (pin 3), V = 0.4 V  
IN  
IIN(off)  
1
--  
50  
90  
µA  
µA  
T =-40..+150°C  
j
On state input current (pin 3), V = 5 V  
IN  
IIN(on)  
20  
50  
T =-40..+150°C  
j
Delay time for status with open load  
after Input neg. slope (see diagram page 13)  
td(ST OL3)  
tdon(ST)  
tdoff(ST)  
--  
--  
--  
400  
13  
1
--  
--  
--  
µs  
µs  
µs  
V
Status delay after positive input slope13)  
T =-40 ... +150°C:  
j
13)  
Status delay after negative input slope  
T =-40 ... +150°C:  
j
Status output (open drain)  
Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)  
5.4  
6.1  
6.9  
j
--  
--  
--  
--  
0.4  
0.7  
ST low voltage  
T =-40...+25°C, IST = +1.6 mA: VST(low)  
j
T = +150°C, IST = +1.6 mA:  
j
Status leakage current, V = 5 V,  
T =25 ... +150°C: IST(high)  
j
--  
--  
2
µA  
ST  
13)  
not subject to production test, specified by design  
14)  
15)  
External pull up resistor required for open load detection in off state.  
If a ground resistor R  
is used, add the voltage drop across this resistor.  
GND  
Semiconductor Group  
Page 6  
2003-Oct-01  

与BTS640S2G相关器件

型号 品牌 描述 获取价格 数据表
BTS640S2GXT INFINEON Buffer/Inverter Based Peripheral Driver, 19A, MOS, PSSO6, PLASTIC, TO-263, 7 PIN

获取价格

BTS640S2S INFINEON Smart Sense High-Side Power Switch

获取价格

BTS6460SF INFINEON SPI Power Controller

获取价格

BTS6480SF INFINEON SPI Power Controller

获取价格

BTS650P INFINEON Smart Highside High Current Power Switch (Overload protection Current limitation Short cir

获取价格

BTS650-P ETC ?6mOhm - Vbb(on) = 5V-34V - TO220 AB/7?

获取价格