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BTS621L1E3128ABTMA1 PDF预览

BTS621L1E3128ABTMA1

更新时间: 2024-01-04 08:39:00
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
15页 337K
描述
Buffer/Inverter Based Peripheral Driver,

BTS621L1E3128ABTMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-220, 7/6 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.69内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G6
长度:9.9 mm功能数量:1
端子数量:6输出电流流向:SINK
标称输出峰值电流:8.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:4.6 mm
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:YES
技术:MOS端子形式:GULL WING
端子节距:1.27 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:400 µs
接通时间:400 µs宽度:9.2 mm
Base Number Matches:1

BTS621L1E3128ABTMA1 数据手册

 浏览型号BTS621L1E3128ABTMA1的Datasheet PDF文件第1页浏览型号BTS621L1E3128ABTMA1的Datasheet PDF文件第2页浏览型号BTS621L1E3128ABTMA1的Datasheet PDF文件第4页浏览型号BTS621L1E3128ABTMA1的Datasheet PDF文件第5页浏览型号BTS621L1E3128ABTMA1的Datasheet PDF文件第6页浏览型号BTS621L1E3128ABTMA1的Datasheet PDF文件第7页 
®
PROFET  
BTS621L1  
Thermal Characteristics  
Parameter and Conditions  
Symbol  
Values  
Unit  
min  
typ  
max  
K/W  
Thermal resistance  
chip - case, both channels: RthJC  
--  
--  
1.7  
each channel:  
junction - ambient (free air):  
SMD version, device on PCB5):  
--  
--  
--  
3.4  
75  
R
thJA  
--  
35  
Electrical Characteristics  
Parameter and Conditions, each channel  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
--  
typ  
max  
Load Switching Capabilities and Characteristics  
On-state resistance (pin 4 to 1 or 7)  
IL = 2 A  
RON  
T=25 °C:  
80  
100  
200  
mΩ  
j
each channel  
T=150 °C:  
160  
4.4  
8.5  
j
Nominal load current, ISO Norm (pin 4 to 1 or 7)  
VON = 0.5 V, T = 85 °C each channel: IL(ISO)  
both channels parallel:  
3.5  
6.8  
--  
--  
10  
A
C
Output current (pin 1 or 7) while GND disconnected  
IL(GNDhigh)  
--  
--  
mA  
or GND pulled up, V =30 V, V = 0, see diagram  
bb  
IN  
page 8  
Turn-on time  
Turn-off time  
IN  
IN  
to 90% VOUT: ton  
to 10% VOUT: toff  
80  
80  
200  
200  
400  
400  
µs  
RL = 12 , T =-40...+150°C  
j
Slew rate on  
dV /dton  
-dV/dtoff  
0.1  
0.1  
--  
--  
1 V/µs  
1 V/µs  
10 to 30% VOUT, RL = 12 , T =-40...+150°C  
j
Slew rate off  
70 to 40% VOUT, RL = 12 , T =-40...+150°C  
j
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V  
5)  
bb  
connection. PCB is vertical without blown air.  
Semiconductor Group  
3
2003-Oct-01  

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