Datasheet > BTS5242-2L

BTS5242-2L

更新时间： 2024-02-06 18:34:58

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BTS5242-2L 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SSOP, SOP12,.4,40	针数：	12
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	8.04
内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE	驱动器位数：	2
接口集成电路类型：	HALF BRIDGE BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PDSO-G12
长度：	7.5 mm	湿度敏感等级：	3
功能数量：	1	端子数量：	12
输出电流流向：	SINK	标称输出峰值电流：	4.5 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SSOP
封装等效代码：	SOP12,.4,40	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, SHRINK PITCH	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	9/16 V	认证状态：	Not Qualified
座面最大高度：	2.6 mm	子类别：	Peripheral Drivers
最大供电电压：	28 V	最小供电电压：	4.5 V
标称供电电压：	13.5 V	表面贴装：	YES
技术：	MOS	端子形式：	GULL WING
端子节距：	1 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	断开时间：	250 µs
接通时间：	250 µs	宽度：	6.4 mm
Base Number Matches：	1

Smart High-Side Power Switch

BTS5242-2L

Electrical Characteristics

T_j= 25 °C (unless otherwise specified)

Pos. Parameter

Symbol Limit Values Unit Test Conditions

min. max.

ESD Susceptibility

4.1.17 ESD susceptibility HBM

V_ESD

kV according to

EIA/JESD 22-A

114B

IN, CLA

-1

-2

-4

OUT

1) R and L describe the complete circuit impedance including line, contact and generator impedances

2) Load Dump is specified in ISO 7637, R_Iis the internal resistance of the Load Dump pulse generator

3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.

Protection features are not designed for continuous repetitive operation.

4) Pulse shape represents inductive switch off: I_L(t) = I_L(0) * (1 - t / t_peak); 0 < t < t_peak.Please see Figure 8

5) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm²copper heatsinking area (one layer, 70 µm

thick) for V_bbconnection. PCB is vertical without blown air.

Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

Data Sheet

Rev.1.2, 2008-09-01

1...6 7 8910 11 12...24

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