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BTS550P

更新时间: 2024-11-20 22:39:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路电源开关过载保护驱动局域网
页数 文件大小 规格书
15页 155K
描述
Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

BTS550P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-218包装说明:ZIP, ZIP5,.15,.2,100TB
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.53其他特性:OVER CURRENT; OVER VOLTAGE; THERMAL
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T5
功能数量:1端子数量:5
输出电流流向:SINK最大输出电流:68 A
标称输出峰值电流:115 A封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装等效代码:ZIP5,.15,.2,100TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED电源:12/24 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:NO
技术:MOS端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:150 µs
接通时间:600 µs

BTS550P 数据手册

 浏览型号BTS550P的Datasheet PDF文件第2页浏览型号BTS550P的Datasheet PDF文件第3页浏览型号BTS550P的Datasheet PDF文件第4页浏览型号BTS550P的Datasheet PDF文件第5页浏览型号BTS550P的Datasheet PDF文件第6页浏览型号BTS550P的Datasheet PDF文件第7页 
®
PROFET Preliminary Data Sheet BTS550P  
Smart Highside High Current Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection Vbb(AZ)  
63  
V
V
V
Current limitation  
Short circuit protection  
Overtemperature protection  
Overvoltage protection (including load dump)  
Clamp of negative voltage at output  
VON(CL)  
Output clamp  
Operating voltage  
On-state resistance  
42  
5.0...34  
V
bb(on)  
R
ON  
4.0  
mΩ  
A
Load current (ISO)  
I
97  
180  
L(ISO)  
L(SCp)  
1)  
Fast deenergizing of inductive loads  
Low ohmic inverse current operation  
Reverse battery protection  
Diagnostic feedback with load current sense  
Open load detection via current sense  
Loss of Vbb protection2)  
Short circuit current limitation I  
Current sense ratio  
A
I : I  
L
21000  
IS  
TO-218AB/5  
Electrostatic discharge (ESD) protection  
Application  
Power switch with current sense diagnostic  
feedback for 12V and 24V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and  
inductive loads  
5
1
Straight leads  
Replaces electromechanical relays, fuses and  
discrete circuits  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
3 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Gate  
Overvoltage  
protection  
protection  
1, 5  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
2
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
4
VIN  
R
VIS  
IS  
Logic GND  
1
)
With additional external diode.  
Additional external diode required for energized inductive loads (see page 8).  
2)  
Semiconductor Group  
Page 1 of 15  
1998-Aug-31  

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