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BTS550 PDF预览

BTS550

更新时间: 2024-01-08 10:32:16
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关
页数 文件大小 规格书
15页 282K
描述
Smart Highside High Current Power Switch

BTS550 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-218包装说明:ZIP, ZIP5,.15,.2,100TB
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.53其他特性:OVER CURRENT; OVER VOLTAGE; THERMAL
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T5
功能数量:1端子数量:5
输出电流流向:SINK最大输出电流:68 A
标称输出峰值电流:115 A封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装等效代码:ZIP5,.15,.2,100TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED电源:12/24 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:NO
技术:MOS端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:150 µs
接通时间:600 µs

BTS550 数据手册

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®
PROFET Data Sheet BTS550  
Smart Highside High Current Power Switch  
Product Summary  
Overvoltage protection  
Output clamp  
Operating voltage  
On-state resistance  
Load current (ISO)  
Reversave  
Reverse battery protection by self turn on of  
power MOSFET  
Vbb(AZ)  
VON(CL)  
62  
V
V
V
44  
5.0...34  
Features  
V
bb(on)  
Overload protection  
Current limitation  
Short circuit protection  
Overtemperature protection  
Overvoltage protection (including load dump)  
Clamp of negative voltage at output  
Fast deenergizing of inductive loads  
Low ohmic inverse current operation  
R
ON  
3.6  
115  
mΩ  
A
I
L(ISO)  
L(SC)  
Short circuit current limitation I  
Current sense ratio  
220  
21000  
A
I : I  
L
IS  
1)  
PG-TO218-5-146  
Diagnostic feedback with load current sense  
Open load detection via current sense  
2)  
Loss of V protection  
bb  
Electrostatic discharge (ESD) protection  
Green Product (RoHS compliant)  
AEC qualified  
5
1
Application  
Straight leads  
Power switch with current sense diagnostic  
feedback for 12V and 24V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.  
3 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Overvoltage  
protection  
Gate  
protection  
1, 5  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
2
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
4
VIN  
R
VIS  
IS  
Logic GND  
1
)
With additional external diode.  
Additional external diode required for energized inductive loads (see page 9).  
2)  
Infineon Technologies AG  
1 of 15  
2010-June-01  

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