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BTS4130QGA PDF预览

BTS4130QGA

更新时间: 2024-02-18 16:31:20
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关
页数 文件大小 规格书
26页 832K
描述
Smart High-Side Power Switch

BTS4130QGA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP20,.4针数:20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.18
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:4
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G20
长度:12.8 mm湿度敏感等级:3
功能数量:1端子数量:20
输出电流流向:SINK标称输出峰值电流:1.1 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP20,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:12 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:2.65 mm
子类别:Peripheral Drivers最大供电电压:20 V
最小供电电压:5.5 V标称供电电压:12 V
表面贴装:YES技术:CMOS
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:270 µs接通时间:250 µs
宽度:7.6 mmBase Number Matches:1

BTS4130QGA 数据手册

 浏览型号BTS4130QGA的Datasheet PDF文件第5页浏览型号BTS4130QGA的Datasheet PDF文件第6页浏览型号BTS4130QGA的Datasheet PDF文件第7页浏览型号BTS4130QGA的Datasheet PDF文件第9页浏览型号BTS4130QGA的Datasheet PDF文件第10页浏览型号BTS4130QGA的Datasheet PDF文件第11页 
BTS4130QGA  
General Product Characteristics  
4
General Product Characteristics  
4.1  
Absolute Maximum Ratings  
Absolute Maximum Ratings 1)  
TJ = 25°C; (unless otherwise specified)  
Pos.  
Parameter  
Symbol  
Limit values  
Unit Conditions  
Min.  
Max.  
Voltages  
4.1.1  
4.1.2  
Supply voltage  
Reverse polarity Voltage  
Supply voltage for short circuit protection Vbat(SC)  
VS  
- VS(REV)  
-0.3  
0
43  
32  
20  
V
V
V
4.1.3  
R
ECU = 20mΩ,  
R
Cable = 16m/m,  
L
Cable = 1µH/m,  
l = 0 or 5m 2)  
see Chapter 6  
Input pins  
4.1.4  
Voltage at INPUT pins  
VIN  
IIN  
IIN  
-10  
-0.3  
-5  
16  
0.3  
5
V
mA  
mA  
4.1.5  
Current through INPUT pins  
Current through INPUT pins pulsed  
4.1.6  
Only for testing  
Status pin  
4.1.7  
4.1.8  
Current through ST 0/1 pin  
Current through ST 2/3 pin  
IST0/1  
IST2/3  
-5  
-5  
5
5
mA  
mA  
Power stage  
4.1.9  
4.1.10  
Load current  
Power dissipation (DC), all channel  
active  
| IL |  
PTOT  
IL(LIM)  
1.4  
A
W
TA = 85°C,  
Tj <150°C  
4.1.11  
Maximum Switchable energy, single  
pulse  
EAS  
76  
mJ  
IL = 2.3A,  
VS = 12V  
Temperatures  
4.1.12  
4.1.13  
Junction Temperature  
Dynamic temperature increase while  
switching  
Tj  
Tj  
-40  
150  
60  
°C  
K
4.1.14  
Storage Temperature  
Tstg  
-55  
150  
°C  
ESD Susceptibility  
4.1.15  
4.1.16  
4.1.17  
ESD Resistivity IN pin  
ESD Resistivity ST 0/1, 2/3 pins  
ESD Resistivity OUT to all other pins  
shorted  
VESD  
VESD  
VESD  
-1  
-4  
-5  
1
4
5
kV  
kV  
kV  
HBM3)  
HBM3)  
HBM3)  
1) Not subject to production test, specified by design  
2) Set up in accordance to AEC Q100-012 and AEC Q101-006  
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B  
Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute  
maximum rating conditions for extended periods may affect device reliability.  
Data Sheet  
8
Rev. 1.0, 2008-03-18  

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