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BTS4141NXT PDF预览

BTS4141NXT

更新时间: 2024-01-15 21:24:39
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
19页 461K
描述
Buffer/Inverter Based Peripheral Driver, 0.7A, MOS, PDSO4, GREEN, PLASTIC, SOT-223, 4 PIN

BTS4141NXT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOP,针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.61
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
长度:6.5 mm功能数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C输出电流流向:SINK
标称输出峰值电流:0.7 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.8 mm
最大供电电压:45 V最小供电电压:12 V
标称供电电压:15 V表面贴装:YES
技术:MOS温度等级:AUTOMOTIVE
端子面层:MATTE TIN端子形式:GULL WING
端子节距:2.3 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40断开时间:150 µs
接通时间:100 µs宽度:3.5 mm
Base Number Matches:1

BTS4141NXT 数据手册

 浏览型号BTS4141NXT的Datasheet PDF文件第2页浏览型号BTS4141NXT的Datasheet PDF文件第3页浏览型号BTS4141NXT的Datasheet PDF文件第4页浏览型号BTS4141NXT的Datasheet PDF文件第5页浏览型号BTS4141NXT的Datasheet PDF文件第6页浏览型号BTS4141NXT的Datasheet PDF文件第7页 
BTS 4141D  
Smart High-Side Power Switch  
1 Channel: 1 x 200mΩ  
Features  
Product Summary  
Overvoltage protection  
Operating voltage  
Short circuit protection  
Current limitation  
Overload protection  
V
V
R
ON  
47  
12...45 V  
200 mΩ  
V
bb(AZ)  
bb(on)  
On-state resistance  
Overvoltage protection (including load dump)  
Undervoltage shutdown with auto-  
restart and hysteresis  
Switching inductive loads  
Clamp of negative voltage at output  
with inductive loads  
CMOS compatible input  
Thermal shutdown with restart  
ESD - Protection  
P-TO252-5-1  
Loss of GND and loss of V protection  
bb  
Very low standby current  
Reverse battery protection with external resistor  
Improved electromagnetic compatibility (EMC)  
Application  
All types of resistive, inductive and capacitive loads  
µC compatible power switch for 12 V and 24 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,  
monolithically integrated in Smart SIPMOS technology.  
Providing embedded protective functions.  
2004-01-27  
Page 1  

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