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BTS426L1E3062A PDF预览

BTS426L1E3062A

更新时间: 2024-09-30 22:31:55
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
14页 327K
描述
Smart Highside Power Switch

BTS426L1E3062A 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220AB, 5 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.63内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G4长度:9.2 mm
湿度敏感等级:1功能数量:1
端子数量:4输出电流流向:SOURCE
最大输出电流:5.8 A封装主体材料:PLASTIC/EPOXY
封装等效代码:SMSIP5H,.6,67TB封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:12/24 V认证状态:Not Qualified
座面最大高度:4.4 mm子类别:Peripheral Drivers
最大供电电压:34 V最小供电电压:5 V
标称供电电压:5.6 V表面贴装:YES
技术:CMOS端子形式:GULL WING
端子节距:1.7 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:450 µs
接通时间:400 µs宽度:9.9 mm
Base Number Matches:1

BTS426L1E3062A 数据手册

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®
PROFET BTS426L1  
Smart Highside Power Switch  
Product Summary  
Features  
Overvoltage protection  
Vbb(AZ)  
43  
V
Overload protection  
Current limitation  
V
5.0 ... 34 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
bb(on)  
Short circuit protection  
R
60  
7.0  
16  
mΩ  
A
ON  
Thermal shutdown  
I
I
L(ISO)  
L(SCr)  
Overvoltage protection (including load dump)  
A
Fast demagnetization of inductive loads  
1
)
Reverse battery protection  
Undervoltage and overvoltage shutdown with auto-restart  
and hysteresis  
TO-220AB/5  
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
5
5
5
Loss of ground and loss of V protection  
bb  
1
1
Straight leads  
Standard  
SMD  
Electrostatic discharge (ESD) protection  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically  
integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
3
Voltage  
source  
Gate  
protection  
Overvoltage  
protection  
Current  
limit  
VLogic  
OUT  
Limit for  
Charge pump  
Level shifter  
Voltage  
sensor  
unclamped  
ind. loads  
5
Temperature  
sensor  
Rectifier  
IN  
2
4
Open load  
Short to Vbb  
detection  
Load  
Logic  
ESD  
R
ST  
O
GND  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST connection, reverse load  
GND  
current limited by connected load.  
Semiconductor Group  
1 of 14  
2003-Oct-01  

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