Datasheet > BTH151S-650R

BTH151S-650R

更新时间： 2024-04-09 19:03:26

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
8页	605K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, high repetitive surge current capability and high thermal cycling performance.

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BTH151S-650R 数据手册

Product specification

WeEn Semiconductors

Thyristor

High Repetitive Surge

BTH151S-650R

ITSM / A

Ptot / W

Tmb(max) / C

120

100

conduction form

factor

TSM

time

angle

degrees

a = 1.57

1.9

2.8

2.2

Tj initial = 25 C max

107

120

180

1.9

2.8

1.57

116

125

IF(AV) / A

10 100

Number of half cycles at 50Hz

1000

Fig.2. Maximum on-state dissipation, P_tot, versus

average on-state current, I_T(AV), where

a = form factor = I_T(RMS)/ I_T(AV)

Fig.5. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

IT(RMS) / A

ITSM / A

1000

100

dI_T/dt limit

TSM

time

Tj initial = 25 C max

0.01

0.1

surge duration / s

10ms

10us

100us

1ms

T / s

Fig.6. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_mb≤ 103˚C.

Fig.3. Maximum permissible rms current I_T(RMS)

versus mounting base temperature T_mb.

VGT(Tj)

VGT(25 C)

IT(RMS) / A

1.6

103 C

1.4

1.2

0.8

0.6

0.4

-50

Tmb / C

100

150

-50

Tj / C

100

150

Fig.4. Maximum permissible rms current I_T(RMS)

versus mounting base temperature T_mb.

Fig.7. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

March 2001

Rev 1.200

1 2 345 6 7 8

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