Datasheet > BTH151S-650R

BTH151S-650R

更新时间： 2024-04-09 19:03:26

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
8页	605K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, high repetitive surge current capability and high thermal cycling performance.

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BTH151S-650R 数据手册

Product specification

WeEn Semiconductors

Thyristor

High Repetitive Surge

BTH151S-650R

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated thyristor in a plastic envelope,

suitable for surface mounting, intended for

use in applications requiring high

bidirectionalblocking voltage capability and

high thermal cycling performance. This

thyristor has a high repetitive surge

specification which makes it suitable for

applications where high inrush currents or

stall currents are likely to occur on a

repetitive basis.

SYMBOL

PARAMETER

MAX. UNIT

V_DRM, V_RRM

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

650

7.5

I_T(AV)

I_T(RMS)

I_TSM

Non-repetitive peak on-state current 110

I_TRM

Repetitive peak on-state current

PINNING - SOT428

PIN CONFIGURATION

tab

SYMBOL

PIN DESCRIPTION

cathode

anode

gate

tab anode

DPAK (SOT428)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DRM

V_RRM

Repetitive peak off-state

voltages

half sine wave;

¹650

I_T(AV)

Average on-state current

T_mb≤ 103 ˚C

7.5

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

t = 8.3 ms

t = 10ms, τ = 3s, T_mb≤ 45˚C, no.

of surges = 100k

t = 10 ms

110

121

I_TRM

Repetitive peak on-state

current

I²t

dI_T/dt

I²t for fusing

A²s

A/μs

Repetitive rate of rise of

on-state current after

triggering

I_TM= 20 A; I_G= 50 mA;

dI_G/dt = 50 mA/μs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.5

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

March 2001

Rev 1.200

123 4 5 6 7 8

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