Datasheet > BTB12-600TW3G

BTB12-600TW3G

更新时间： 2024-11-06 06:44:27

品牌	Logo	应用领域
安森美 - ONSEMI		三端双向交流开关局域网
页数	文件大小	规格书
6页	107K
描述
Triacs Silicon Bidirectional Thyristors

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BTB12-600TW3G 数据手册

BTB12-600TW3G

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications

where high noise immunity and high commutating di/dt are required.

Features

• Blocking Voltage to 600 V

http://onsemi.com

• On-State Current Rating of 12 A RMS at 80°C

• Uniform Gate Trigger Currents in Three Quadrants

• High Immunity to dV/dt − 10 V/ꢀ s minimum at 125°C

• Minimizes Snubber Networks for Protection

• Industry Standard TO-220AB Package

• High Commutating dI/dt − 1.75 A/ms minimum at 110°C

• These are Pb−Free Devices

TRIACS

12 AMPERES RMS

600 VOLTS

MT2

MT1

MARKING

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DIAGRAM

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

BTB12−600TW3G

600

BTB12−6TWG

On-State RMS Current

T(RMS)

TO−220AB

CASE 221A

STYLE 4

AYWW

(Full Cycle Sine Wave, 60 Hz, T = 80°C)

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

126

TSM

= 25°C)

= Assembly Location

= Year

= Work Week

Circuit Fusing Consideration (t = 8.3 ms)

I t

A sec

Non−Repetitive Surge Peak Off−State

DSM/

RSM

DSM/ RSM

= Pb−Free Package

Voltage (T = 25°C, t = 10ms)

+100

Peak Gate Current (T = 110°C, t = 20 ꢀ s)

4.0

Peak Gate Power

(Pulse Width ≤ 1.0 ꢀ s, T = 80°C)

PIN ASSIGNMENT

Average Gate Power (T = 110°C)

1.0

°C

G(AV)

Main Terminal 1

Operating Junction Temperature Range

Storage Temperature Range

−40 to +110

−40 to +150

Main Terminal 2

Gate

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Main Terminal 2

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

ORDERING INFORMATION

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Device

Package

Shipping

50 Units / Rail

BTB12−600TW3G TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and

soldering details, please download the ON Semicon-

ductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

October, 2008 − Rev. 0

BTB12−600TW3/D

12 3 4 5 6

中文翻译

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与BTB12-600TW3G相关器件

型号	品牌	获取价格	描述	数据表
BTB12600TWRG	STMICROELECTRONICS	获取价格	12 A Snubberless, logic level and standard triacs
BTB12-600TWRG	STMICROELECTRONICS	获取价格	12A TRIACS
BTB12-600W	ETC	获取价格	12A TRIACS
BTB1270001	ETC	获取价格	OSC XO 212.5MHZ 3.3V SMD
BTB1270004	ETC	获取价格	OSC XO 212.5MHZ 3.3V SMD
BTB12-700AW	ETC	获取价格	TRIAC\|700V V(DRM)\|12A I(T)RMS\|TO-220
BTB12-700B	ETC	获取价格	TRIAC\|700V V(DRM)\|12A I(T)RMS\|TO-220
BTB12-700B/F2	STMICROELECTRONICS	获取价格	700V, 12A, TRIAC, TO-220, TO-220, 3 PIN
BTB12-700B/F3	STMICROELECTRONICS	获取价格	700V, 12A, TRIAC, TO-220, TO-220, 2 PIN
BTB12-700B/F5	STMICROELECTRONICS	获取价格	700V, 12A, TRIAC, TO-220, TO-220, 3 PIN

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