5秒后页面跳转
BTB08A-800B PDF预览

BTB08A-800B

更新时间: 2024-11-19 22:48:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可控硅三端双向交流开关
页数 文件大小 规格书
10页 49K
描述
8A TRIACS

BTB08A-800B 数据手册

 浏览型号BTB08A-800B的Datasheet PDF文件第2页浏览型号BTB08A-800B的Datasheet PDF文件第3页浏览型号BTB08A-800B的Datasheet PDF文件第4页浏览型号BTB08A-800B的Datasheet PDF文件第5页浏览型号BTB08A-800B的Datasheet PDF文件第6页浏览型号BTB08A-800B的Datasheet PDF文件第7页 
BTA/BTB08 and T8 Series  
SNUBBERLESS, LOGIC LEVEL & STANDARD  
8A TRIACS  
MAIN FEATURES:  
A2  
A2  
A2  
Symbol  
Value  
8
Unit  
A
G
I
T(RMS)  
A1  
A1  
A2  
G
A2  
G
A1  
V
/V  
600 and 800  
V
DRM RRM  
2
DPAK  
(T8-B)  
D PAK  
(T8-G)  
I
5 to 50  
mA  
GT (Q )  
1
A2  
DESCRIPTION  
Available either in through-hole or surface-mount  
packages, the BTA/BTB08 and T8 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control operation in light dimmers, motor  
speed controllers,...  
A1  
A2  
IPAK  
(T8-H)  
G
A2  
The snubberless versions (BTA/BTB...W and T8  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. By using an internal ceramic pad,  
the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA08)  
TO-220AB  
(BTB08)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (full sine wave)  
A
T(RMS)  
DPAK / D PAK  
IPAK / TO-220AB  
Tc = 110°C  
8
TO-220AB Ins.  
F = 50 Hz  
Tc = 100°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
80  
84  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
tp = 10 ms  
45  
50  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
September 2000 - Ed: 3  
1/10