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BTB10 PDF预览

BTB10

更新时间: 2024-11-13 11:16:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可控硅
页数 文件大小 规格书
4页 63K
描述
10A标准和Snubberless™三端双向可控硅

BTB10 数据手册

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BTA10 GP  
TRIACS  
FEATURES  
.
.
.
.
LOW I = 13mA max  
H
HIGH SURGE CURRENT : I  
= 120A  
TSM  
I
SPECIFIED IN FOUR QUADRANTS  
GT  
INSULATING VOLTAGE = 2500V  
(UL RECOGNIZED : E81734)  
(RMS)  
A1  
A2  
DESCRIPTION  
G
The BTA10 GP’s use high performance, glass pas-  
sivated chips.  
The insulated TO220AB package, the high surge  
current and low holding current make this family  
well adapted to LIGHT DIMMER applications.  
TO220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(360° conduction angle)  
Tc = 90 °C  
10  
A
T(RMS)  
I
Non repetitive surge peak on-state current  
( Tj initial = 25°C )  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
126  
120  
72  
A
TSM  
2
I t  
2
2
A s  
I t value  
dI/dt  
Critical rate of rise of on-state current  
Repetitive  
F = 50 Hz  
10  
A/µs  
Gate supply : I = 500mA di /dt = 1A/µs  
G
G
Non  
50  
Repetitive  
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10 s at 4.5 mm  
from case  
260  
°C  
Symbol  
Parameter  
BTA10-  
Unit  
400 GP  
400  
600 GP  
V
V
Repetitive peak off-state voltage  
Tj = 125 °C  
600  
V
DRM  
RRM  
1/4  
March 1995  

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