Datasheet > BTA608A3

BTA608A3

更新时间： 2024-09-26 06:44:27

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	178K
描述
General Purpose PNP Epitaxial Planar Transistor

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数据手册

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BTA608A3 数据手册

Spec. No. : C306A3-S

Issued Date : 2005.09.29

Revised Date :

CYStech Electronics Corp.

Page No. : 1 / 5

General Purpose PNP Epitaxial Planar Transistor

BTA608A3

Features

• The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

• High H_FEand excellent linearity

• Large current capability and wide SOA

• Complementary to BTC536A3

• Pb-free package

Symbol

Outline

BTA608A3

TO-92

B：Base

C：Collector

E：

Emitter

E C B

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VCBO

VCEO

VEBO

-60

-50

-6

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

-150

-400

500

°C/W

°C

ICP

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

RθJA

250

150

Tstg

-55~+150

°C

BTA608A3

CYStek Product Specification

12 3 4 5

中文翻译

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