Datasheet > BTA854W

BTA854W

更新时间： 2024-11-24 12:53:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
1页	124K
描述
Very low forward voltage Very low reverse current Guard ring protected

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中文翻译

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数据手册

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BTA854W 数据手册

Product specification

BAT854W;BAT854AW

BAT854CW;BAT854SW

Features

Very low forward voltage

Very low reverse current

Guard ring protected

Very small SMD package.

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Repetitive peak forward current

Non-repetitive peak forward current

Storage temperature

Symbol

V^R

Conditions

Min

Max

Unit

I^F

200

300

I^FRM

I^FSM

T^stg

T^j

tp 1 s; d 0.5

t = 8.3 ms half sinewave;JEDEC method

-65

+150

150

+150

625

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

T^amb

R^{th j-a}

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

I^F= 0.1 mA

Typ

Max

Unit

200

260

340

I^F= 1 mA

Forward voltage

V^F

I^F= 10 mA

I^F= 30 mA

420

550

0.5

I^F= 100 mA

Continuous reverse current

Diode capacitance

Note

I^R

V^R= 25 V; Note 1

f = 1 MHz; V^R= 1 V

C^d

1. Pulse test: tp

300 s; ä

0.02.

Marking

Type

BTA854W

BAT854AW

BAT854CW

BAT854SW

Marking

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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