5秒后页面跳转
BTA41-700BRG PDF预览

BTA41-700BRG

更新时间: 2024-01-14 21:36:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 三端双向交流开关栅极
页数 文件大小 规格书
9页 94K
描述
TRIAC,700V V(DRM),40A I(T)RMS,TO-218

BTA41-700BRG 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:7 weeks
风险等级:8.14关态电压最小值的临界上升速率:150 V/us
最大直流栅极触发电流:50 mA最大直流栅极触发电压:2.5 V
最大维持电流:80 mA最大漏电流:4 mA
最大通态电压:1.6 V最高工作温度:110 °C
最低工作温度:-40 °C最大均方根通态电流:40 A
断态重复峰值电压:700 V子类别:TRIACs
表面贴装:NO触发设备类型:TRIAC
Base Number Matches:1

BTA41-700BRG 数据手册

 浏览型号BTA41-700BRG的Datasheet PDF文件第1页浏览型号BTA41-700BRG的Datasheet PDF文件第3页浏览型号BTA41-700BRG的Datasheet PDF文件第4页浏览型号BTA41-700BRG的Datasheet PDF文件第5页浏览型号BTA41-700BRG的Datasheet PDF文件第6页浏览型号BTA41-700BRG的Datasheet PDF文件第7页 
Characteristics  
BTA40, BTA41, BTB41  
1
Characteristics  
Table 2.  
Absolute maximum ratings  
Symbol  
Parameter  
TOP3  
Value  
Unit  
Tc = 95 °C  
Tc = 80 °C  
t = 20 ms  
On-state rms current  
(full sine wave)  
IT(RMS)  
40  
A
RD91 / TOP ins.  
F = 50 Hz  
400  
420  
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25 °C)  
ITSM  
A
F = 60 Hz  
t = 16.7 ms  
²
²
²
I t  
I t Value for fusing  
tp = 10 ms  
1000  
A s  
Critical rate of rise of on-state current  
IG = 2 x IGT , tr 100 ns  
dI/dt  
F = 120 Hz  
Tj = 125 °C  
Tj = 25 °C  
50  
A/µs  
V
Non repetitive surge peak off-state  
voltage  
V
DSM/VRSM  
+
VDSM/VRSM  
tp = 10 ms  
tp = 20 µs  
100  
IGM  
Peak gate current  
Tj = 125 °C  
Tj = 125 °C  
8
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
Table 3.  
Symbol  
Electrical characteristics (T = 25 °C, unless otherwise specified)  
j
Parameter  
Value  
Unit  
I - II - III  
MAX.  
IV  
50  
100  
(1)  
IGT  
mA  
VD = 12 V  
RL = 33 Ω  
VGT  
VGD  
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
80  
V
V
VD = VDRM RL = 3.3 kΩ Tj = 125 °C  
IH (2)  
IT = 500 mA  
MAX.  
mA  
I - III - IV  
II  
70  
IL  
IG = 1.2 IGT  
MAX.  
mA  
160  
500  
10  
dV/dt(2)  
VD = 67% VDRM gate open  
Tj = 125 °C  
Tj = 125 °C  
MIN.  
MIN.  
V/µs  
V/µs  
(dV/dt)c(2) (dI/dt)c = 20 A/ms  
1. Minimum I  
is guaranted at 5% of I  
max.  
GT  
GT  
2. for both polarities of A2 referenced to A1  
2/9  
Doc ID 7469 Rev 8  
 

与BTA41-700BRG相关器件

型号 品牌 描述 获取价格 数据表
BTA41-800 LGE Discrete Traics (Isolated)

获取价格

BTA41-800A ETC TRIAC|800V V(DRM)|40A I(T)RMS|SOT-93

获取价格

BTA41-800B STMICROELECTRONICS 40A TRIACS

获取价格

BTA41-800B TGS 40A TRIACS

获取价格

BTA41-800B WEEN Planar passivated four quadrant triac in a IITO3P ?package intended for use in circuits wh

获取价格

BTA41-800BRG STMICROELECTRONICS 40A TRIACs

获取价格