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BTA312X-800E PDF预览

BTA312X-800E

更新时间: 2024-04-09 19:00:41
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 524K
描述
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers.

BTA312X-800E 数据手册

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BTA312X-800E  
3Q Hi-Com Triac  
Rev.02 - 27 December 2022  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package.  
This "series E" triac balances the requirements of commutation performance and gate sensitivity  
and is intended for interfacing with low power drivers including microcontrollers.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct interfacing with low power drivers and microcontrollers  
Good immunity to false turn-on by dV/dt  
High commutation capability with sensitive gate  
High voltage capability  
Isolated mounting base package  
Sensitive gate for easy logic level triggering  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
800  
12  
V
A
A
RMS on-state current  
full sine wave; Th ≤ 59 °C;  
Fig. 1; Fig. 2; Fig. 3  
non-repetitive peak on-  
state current  
full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
Fig. 4; Fig. 5  
100  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
110  
A
Tj  
junction temperature  
125  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
-
-
10  
10  
10  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  

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