Datasheet > BTA216SERIESD.EANDF

BTA216SERIESD.EANDF

更新时间： 2022-01-19 03:50:00

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其他 - ETC		可控硅
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描述
Three quadrant triacs guaranteed commutation

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Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

Tmb(max) / C

= 180

IT(RMS) / A

BT139

Ptot / W

99 C

101

107

120

113

119

125

-50

Tmb / C

100

150

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P_tot, versus rms

on-state current, I_T(RMS), where α = conduction angle.

Fig.4. Maximum permissible rms current I_T(RMS)

versus mounting base temperature T_mb.

ITSM / A

1000

IT(RMS) / A

dI_T/dt limit

100

TSM

time

Tj initial = 25 C max

10ms 100ms

10us

100us

1ms

T / s

0.01

0.1

surge duration / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 20ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_mb≤ 99˚C.

ITSM / A

150

VGT(Tj)

VGT(25 C)

1.6

TSM

time

1.4

1.2

100

Tj initial = 25 C max

0.8

0.6

0.4

100

1000

-50

Tj / C

100

150

Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

February 2000

Rev 1.000

1 234 5 6

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