Datasheet > BTA216SERIESD.EANDF

BTA216SERIESD.EANDF

更新时间： 2024-01-24 06:27:32

品牌	Logo	应用领域
其他 - ETC		可控硅
页数	文件大小	规格书
6页	46K
描述
Three quadrant triacs guaranteed commutation

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BTA216SERIESD.EANDF 数据手册

浏览型号BTA216SERIESD.EANDF的Datasheet PDF文件第1页

浏览型号BTA216SERIESD.EANDF的Datasheet PDF文件第3页

浏览型号BTA216SERIESD.EANDF的Datasheet PDF文件第4页

浏览型号BTA216SERIESD.EANDF的Datasheet PDF文件第5页

浏览型号BTA216SERIESD.EANDF的Datasheet PDF文件第6页

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance

full cycle

1.2

1.7

K/W

junction to mounting base half cycle

R_{th j-a}

Thermal resistance

junction to ambient

in free air

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP.

MAX.

...E

UNIT

BTA216-

...D

...F

I_GT

Gate trigger current²

Latching current

V_D= 12 V; I_T= 0.1 A

T2+ G+

1.3

2.6

3.4

T2+ G-

T2- G-

I_L

V_D= 12 V; I_GT= 0.1 A

T2+ G+

10.2

11.3

19.3

T2+ G-

T2- G-

I_H

Holding current

V_D= 12 V; I_GT= 0.1 A

...D, E, F

V_T

On-state voltage

I_T= 20 A

1.2

0.7

0.4

1.5

V_GT

Gate trigger voltage

V_D= 12 V; I_T= 0.1 A

V_D= 400 V; I_T= 0.1 A;

T_j= 125 ˚C

0.25

I_D

Off-state leakage current V_D= V_DRM(max)

;

0.1

0.5

T_j= 125 ˚C

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

...E

TYP. MAX. UNIT

...D

BTA216-

V_DM= 67% V_DRM(max)

T_j= 110 ˚C; exponential

waveform; gate open

circuit

...D

...F

dV_D/dt

dI_com/dt

Critical rate of rise of

off-state voltage

;

7.5

100

V/µs

A/ms

Critical rate of change of

commutating current

V_DM= 400 V; T_j= 110 ˚C; 2.5

I_T(RMS)= 16 A;

4.7

9.5

dV_com/dt = 20V/µs; gate

open circuit

Critical rate of change of

commutating current

V_DM= 400 V; T_j= 110 ˚C;

I_T(RMS)= 16 A;

dV_com/dt = 0.1V/µs; gate

open circuit

...D, E, F

t_gt

Gate controlled turn-on

time

I_TM= 20 A; V_D= V_DRM(max)

;

µs

I_G= 0.1 A; dI_G/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

February 2000

Rev 1.000

123 4 5 6

中文翻译

下载PDF

与BTA216SERIESD.EANDF相关器件

型号	品牌	获取价格	描述	数据表
BTA216SERIESDEANDF	ETC	获取价格	Three quadrant triacs guaranteed commutation
BTA216X	NXP	获取价格	Three quadrant triacs guaranteed commutation
BTA216X_SERIES_B	ETC	获取价格	Three quadrant triacs high commutation
BTA216X_SERIES_D/E_AND_F	ETC	获取价格	Three quadrant triacs guaranteed commutation
BTA216X-500B	NXP	获取价格	Three quadrant triacs high commutation
BTA216X-500B	PHILIPS	获取价格	暂无描述
BTA216X500C	PHILIPS	获取价格	TRIAC, 500V V(DRM), 16A I(T)RMS
BTA216X-500C	NXP	获取价格	Three quadrant triacs high commutation
BTA216X-600B	NXP	获取价格	Three quadrant triacs high commutation
BTA216X-600B	PHILIPS	获取价格	TRIAC, 600V V(DRM), 16A I(T)RMS,