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BTA216-800B,127 PDF预览

BTA216-800B,127

更新时间: 2024-01-23 09:42:07
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页数 文件大小 规格书
8页 112K
描述
BTA216-800B

BTA216-800B,127 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
Factory Lead Time:6 weeks风险等级:5.54
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大均方根通态电流:16 A参考标准:IEC-134
断态重复峰值电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SNUBBERLESS TRIACBase Number Matches:1

BTA216-800B,127 数据手册

 浏览型号BTA216-800B,127的Datasheet PDF文件第1页浏览型号BTA216-800B,127的Datasheet PDF文件第2页浏览型号BTA216-800B,127的Datasheet PDF文件第3页浏览型号BTA216-800B,127的Datasheet PDF文件第5页浏览型号BTA216-800B,127的Datasheet PDF文件第6页浏览型号BTA216-800B,127的Datasheet PDF文件第7页 
ꢁꢂꢃ Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA216 series B  
IT(RMS) / A  
Tmb(max) / C  
= 180  
Ptot / W  
20  
15  
10  
5
25  
95  
99 C  
101  
107  
20  
1
120  
90  
15  
10  
5
60  
30  
113  
119  
125  
0
0
-50  
0
50  
Tmb / C  
100  
150  
0
5
10  
IT(RMS) / A  
15  
20  
Fig.1. Maximum on-state dissipation, Ptot, versus rms  
on-state current, IT(RMS), where α = conduction angle.  
Fig.4. Maximum permissible rms current IT(RMS)  
versus mounting base temperature Tmb.  
,
ITSM / A  
IT(RMS) / A  
1000  
50  
40  
30  
20  
10  
0
dIT/dt limit  
100  
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
10ms 100ms  
10  
10us  
100us  
1ms  
T / s  
0.01  
0.1  
surge duration / s  
1
10  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 20ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tmb 99˚C.  
VGT(Tj)  
VGT(25 C)  
ITSM / A  
150  
100  
50  
1.6  
1.4  
1.2  
1
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
0.8  
0.6  
0.4  
0
1
10 100  
Number of cycles at 50Hz  
1000  
-50  
0
50  
Tj / C  
100  
150  
Fig.3. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
October 1997  
3
Rev 1.200  

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