BTA216B-800B

更新时间： 2024-01-15 03:57:56

品牌	Logo	应用领域
恩智浦 - NXP		三端双向交流开关
页数	文件大小	规格书
6页	53K
描述
Triacs high commutation

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技术参数
数据手册

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BTA216B-800B 技术参数

生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.76	外壳连接：	MAIN TERMINAL 2
配置：	SINGLE	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	最大均方根通态电流：	16 A
断态重复峰值电压：	800 V	表面贴装：	YES
端子面层：	TIN	端子形式：	GULL WING
端子位置：	SINGLE	触发设备类型：	TRIAC
Base Number Matches：	1

BTA216B-800B 数据手册

Philips Semiconductors

Product specification

Triacs

high commutation

BTA216B series B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high commutation

triacs in a plastic envelope suitable

forsurfacemounting, intended foruse

in circuits where high static and

dynamic dV/dt and high dI/dt can

occur. These devices will commutate

the full rated rms current at the

maximum rated junction temperature,

without the aid of a snubber.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BTA216B- 500B 600B 800B

V_DRM

Repetitive peak off-state

voltages

500

600

800

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

140

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

mb main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

full sine wave;

T_mb≤ 99 ˚C

Non-repetitive peak

on-state current

full sine wave;

T_j= 25 ˚C prior to

surge

t = 20 ms

140

150

t = 16.7 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

t = 10 ms

A²s

A/µs

dI_T/dt

I_TM= 20 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

100

I_GM

V_GM

P_GM

P_G(AV)

over any 20 ms

period

0.5

T_stg

T_j

Storage temperature

Operating junction

temperature

-40

150

125

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

October 1997

Rev 1.100

12 3 4 5 6

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