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BTA216-800B,127 PDF预览

BTA216-800B,127

更新时间: 2024-02-14 22:08:24
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页数 文件大小 规格书
8页 112K
描述
BTA216-800B

BTA216-800B,127 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
Factory Lead Time:6 weeks风险等级:5.54
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大均方根通态电流:16 A参考标准:IEC-134
断态重复峰值电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SNUBBERLESS TRIACBase Number Matches:1

BTA216-800B,127 数据手册

 浏览型号BTA216-800B,127的Datasheet PDF文件第1页浏览型号BTA216-800B,127的Datasheet PDF文件第2页浏览型号BTA216-800B,127的Datasheet PDF文件第4页浏览型号BTA216-800B,127的Datasheet PDF文件第5页浏览型号BTA216-800B,127的Datasheet PDF文件第6页浏览型号BTA216-800B,127的Datasheet PDF文件第7页 
ꢁꢂꢃ Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA216 series B  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance full cycle  
junction to mounting base half cycle  
-
-
-
-
-
60  
1.2  
1.7  
-
K/W  
K/W  
K/W  
Thermal resistance  
junction to ambient  
in free air  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
Gate trigger current2  
VD = 12 V; IT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
2
2
2
18  
21  
34  
50  
50  
50  
mA  
mA  
mA  
IL  
Latching current  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
-
-
-
-
31  
34  
30  
31  
1.2  
0.7  
0.4  
0.1  
60  
90  
60  
60  
1.5  
1.5  
-
mA  
mA  
mA  
mA  
V
V
V
mA  
IH  
VT  
VGT  
Holding current  
On-state voltage  
Gate trigger voltage  
VD = 12 V; IGT = 0.1 A  
IT = 20 A  
VD = 12 V; IT = 0.1 A  
-
-
0.25  
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C  
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C  
ID  
0.5  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
dIcom/dt  
tgt  
Critical rate of rise of  
off-state voltage  
Critical rate of change of  
commutating current  
Gate controlled turn-on  
time  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform; gate open circuit  
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A;  
without snubber; gate open circuit  
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/μs  
1000 4000  
-
-
-
V/μs  
A/ms  
μs  
-
-
28  
2
2 Device does not trigger in the T2-, G+ quadrant.  
October 1997  
2
Rev 1.200  

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