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BTA212X-600E PDF预览

BTA212X-600E

更新时间: 2024-11-24 22:08:55
品牌 Logo 应用领域
恩智浦 - NXP 可控硅三端双向交流开关局域网
页数 文件大小 规格书
7页 52K
描述
Three quadrant triacs guaranteed commutation

BTA212X-600E 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.29其他特性:SENSITIVE GATE
外壳连接:ISOLATED配置:SINGLE
关态电压最小值的临界上升速率:20 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V最大维持电流:12 mA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大漏电流:0.5 mA元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:12 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIAC

BTA212X-600E 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA212X series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a full pack, plastic envelope  
intended for use in motor control circuits  
or with other highly inductive loads.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA212X-  
BTA212X-  
BTA212X-  
600D  
-
600E 800E  
600F 800F  
These  
devices  
balance  
the  
requirements  
of  
commutation  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
800  
V
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
IT(RMS)  
ITSM  
12  
95  
12  
95  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
12  
A
Ths 56 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
February 2000  
1
Rev 1.000  

BTA212X-600E 替代型号

型号 品牌 替代类型 描述 数据表
BTA212X-600E,127 NXP

完全替代

BTA212X-600E

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