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BT236-D PDF预览

BT236-D

更新时间: 2024-11-13 03:22:59
品牌 Logo 应用领域
SEMIWELL 可控硅
页数 文件大小 规格书
5页 583K
描述
Sensitive Gate Triacs

BT236-D 数据手册

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Preliminary  
SemiWell Semiconductor  
BT236-D  
Sensitive Gate Triacs  
Symbol  
2.T2  
Features  
▼▲  
Repetitive Peak Off-State Voltage : 600V  
3.Gate  
R.M.S On-State Current ( I  
= 6 A )  
T(RMS)  
High Commutation dv/dt  
1.T1  
Sensitive Gate Triggering 4 Mode  
Non-isolated Type  
TO-220  
General Description  
This device is sensitive gate triac suitable for direct coupling  
to TTL, HTL, CMOS and application such as various logic  
functions, AC switching applications, phase control applica-  
tion such as fan speed, light controllers and home appliance  
equipment.  
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )  
Symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
Condition  
Ratings  
600  
Units  
Sine wave, 50 to 60 Hz, Gate open  
TC =101 °C, Full Sine wave  
V
A
IT(RMS)  
6.0  
One Cycle, 50Hz/60Hz, Peak,  
Non-Repetitive  
ITSM  
I2t  
Surge On-State Current  
60/66  
18  
A
I2t for Fusing  
A2s  
W
tp = 10ms  
T
C = 101 °C, Pulse width 1.0us  
PGM  
PG(AV)  
IGM  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
3.0  
0.3  
2.0  
Over any 20ms period  
tp = 20us, TJ=125°C  
W
A
tp = 20us, TJ=125°C  
VGM  
TJ  
Peak Gate Voltage  
10  
V
Operating Junction Temperature  
Storage Temperature  
- 40 ~ 125  
- 40 ~ 150  
°C  
°C  
TSTG  
Mar, 2004. Rev. 0  
1/5  
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.  

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