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BT138B-600G/T3 PDF预览

BT138B-600G/T3

更新时间: 2024-11-25 14:48:11
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 45K
描述
TRIAC, 600 V, 12 A, 4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC PACKAGE-3

BT138B-600G/T3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.14
外壳连接:MAIN TERMINAL 2配置:SINGLE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大均方根通态电流:12 A断态重复峰值电压:600 V
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT138B-600G/T3 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
BT138B series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated triacs in a plastic envelope  
suitable for surface mounting, intended for  
use in applications requiring high  
bidirectional transient and blocking voltage  
capability and high thermal cycling  
performance. Typical applications include  
motor control, industrial and domestic  
lighting, heating and static switching.  
SYMBOL  
PARAMETER  
MAX. UNIT  
BT138B-  
BT138B-  
BT138B-  
600  
600F  
600G  
600  
VDRM  
Repetitive peak off-state  
voltages  
V
IT(RMS)  
ITSM  
RMS on-state current  
12  
95  
A
A
Non-repetitive peak on-state  
current  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
mb  
main terminal 1  
main terminal 2  
gate  
T2  
T1  
2
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
6001  
12  
UNIT  
V
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 99 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
A
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
July 2001  
1
Rev 1.400  

BT138B-600G/T3 替代型号

型号 品牌 替代类型 描述 数据表
BT138B-600E WEEN

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