Datasheet > BT138D-800E

BT138D-800E

更新时间： 2024-09-26 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		可控硅
页数	文件大小	规格书
6页	477K
描述
晶闸管(可控硅)/模块

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数据手册

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BT138D-800E 数据手册

UMW

BT138-800

Bidirectional Thyristor

Product features and main applications:

NPNPN

five-layer

structure

silicon

bidirectional devices; with independent intellectual

property rights of single-sided digging technology,

table glass passivation process; multi-layer

metallized electrodes on the back; with high blocking

voltage and high temperature stability.

Mainly used in:

vacuum cleaners, power tools and other motor

speed controllers; solid state relays; heating

controllers (temperature regulation); other phase

control circuits.

Characteristics

Absolute maximum ratings (Tj = 25°C unless otherwise stated)

Symbol

Parameter name

value

Unit

RMS on-state current (full sine

BTA

BTB

Tc=80℃

Tc=90℃

I_T(RMS)

wave)

Non repetitive surge peak

on-state current (full cycle, Tj

initial = 25°C)

F=50HZ

I_TSM

120

tp=20ms

I²t

I2t value for fusing

tp=10ms

A²S

A/us

Critical rate of rise of on -state

current IG = 2 x IGT, tr ≤

100 ns

di/dt

Tj=125

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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